Research On A New Structure Low Power Loss IGBT

A IGBT with a new smicture Which is named Low Power Loss IGBT(LPL-IGBT), is proposed in this paper, based on a simple concept that the power lossof IGBT will be reduced if the device has a n+ buffer and thus a much thinner n-region, while remained being processed on bulk silicon and produced a very thin andlow doped back p+ emitter by ion imp1antation, as NPT-IGBT is processed. In theprocess of LPL-IGBT a double diffesion on n- bulk silicon material is first executed,which makes thick n+ diffesion regions in both sides of it. Then MOSFET cells aremanufactUred on n- region, which is uncovered by removing the n+ diffesion region onit. After this, the back p+ emitter is produced by implaming B ions on the other n+diffosion region, Which is reduced to a cermin thicAness in advance remained aresidual layer of the pre-diffosed n+ region. At last the back electrode is made. Havinga much thicker n+ buffer, LPL-IGBT overcomes the shortcoming of FSIGBT whoseperformances of breakdown and leakage current are so unstable that keep backFSIGBT adopted in industries. The computing simulations show that the power lossof LPL-IGBT is almost a half of that of the PT-IGBT or NPT-IGBT The primaryresult of experimental proved the advantage of LPL-IGBT to a certain degree.