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Simulation Analysis And Visual Realization Of Complex Refractive Index Waveguide

Posted on:2002-02-13Degree:MasterType:Thesis
Country:ChinaCandidate:P C LuFull Text:PDF
GTID:2168360032455925Subject:Semiconductor devices and microelectronics
Abstract/Summary:PDF Full Text Request
At the most important part of the optoelectronics industry, Semiconductor laser has become one of the most prospective products after the large-sclale integrated circuits. Semiconductor lasers have many advantages such as small volume, high power conversion efficiency, low dissipation of energy, direct current modulation, high rate of data transmission, high reliability, long lifetime and wide lasing spectrum etc. Because of these advantages semiconductor lasers have been heavily used in many fields. Particularly, the high power semiconductor lasers are the hotspot and focus of current research and industrialization.In this thesis, we firstly analyzed the main problems and limits of high power semiconductor lasers with ordinary structure, then introduced the theory of the novel high efficiency high power tunneling regenerated QW lasers proposed be professor Shen Guangdi. By comparing the new type lasers with the ordinary ones, we analyzed the characteristics such as: inner quantum efficiency, external differential quantum efficiency, power conversion efficiency and threshold current density, and summarize the main advantages of the novel high efficiency high power tunneling regenerated QW lasers. This new type lasers will have novel high quantum efficiency larger than 1, can achieve high output power at relative low current density and overcome the main hinder of ordinary high power semiconductor lasers: catastrophic optical damage (COD) by increase the size of facula. Basing on the analysis above, we also summarized two main problems that should be considered carefully in the design of this new type laser.By measuring and analyzing the characteristics of these new type lasers, we proved the physical theory of the novel high efficiency high power tunneling regenerated QW lasers and obtain the devices with the novel high quantum efficiency larger than 1.In real waveguide structure ,such as MQW laser, including several gain domain or lose domain, but gain and lose are connected with the real part of complex refract index .To analysis waveguide, we must get the complex refract index.In allusion to the structure of one active region ,two active region, three active region ,and four active region, we do some simulation and experiment. According to the results of, computation and experiment , we analysis optics characteristic of the tunneling regenerated QW lasers. To process more research, do some availability work.
Keywords/Search Tags:High power semiconductor lasers, high power tunneling regenerated QW lasers, complex waveguide
PDF Full Text Request
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