Cavity Surface Temperature Measurement Of High Power Semiconductor Lasers By Reflection Method

In recent years, development of high power semiconductor lasers which was a important part of semiconductor lasers has taken great attention of researchers. As more novel semiconductors with different working mode, beam quality and power level emerged for application in new field, the heat characteristic research became more and more important.The cavity facet temperature of high power semiconductor lasers can be measured by non-touch detection method in according to opto-thermal reflection theory, and the main result was obtained. It has been revealed that there is a large amount of heat generation in the active region while the device operates, The cavity facet temperature profile can be achieved by measuring optical reflecting intensity under different bias current. The temperature measurement accurary was within 1.0°C. This measure system is simple and nondestructive for evaluation of high power semiconductor lasers, and it can be used as a method of cavity facet temperature evaluation and characteristics optimization.