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Reasearch On Nanocomposition Zr-C-N Thin Films Deposited By Cathodic Vacuum Arc

Posted on:2011-05-31Degree:MasterType:Thesis
Country:ChinaCandidate:S G ZhouFull Text:PDF
GTID:2120330332456330Subject:Physical Electronics
Abstract/Summary:PDF Full Text Request
In this dissertation, Zr-N-C films were deposited by cathodic vacuum arc (CVA) technique. Zr-N-C films can be obtained when two independent targets of Zr discharge and CH2 simultaneously under N2 background. The films are composed of ZrN, ZrC and ZrxC1-xN multiphases. The Zr-N-C films present higher hardness than ZrN and ZrC films because of solution strength, distortion of lattice, mischcrystal strength mechanism. Judging from the indentation technique results, the films exhibit ideal fracture toughness and adhesion strength with substrate.For the first time, Zr-N-C films were obtained by inputting ionized CH2 and N2 mixture during Zr discharge using CVA deposition technique. It shows that the films are composed of SiNx (amorphous) and ZrN phases. The presence of SiNx has great influence on the preferred orientation, ZrN crystal grain size, microstructure, and pack density of the films. Moreover, the hardness and wear resistance of the Zr-N-C films with appropriate C content can be improved greatly as a result of the microstructure change.
Keywords/Search Tags:Cathodic vacuum arc, CH2 partial pressure, Zr-N-C
PDF Full Text Request
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