| The objective of this research is to develop analytical and computer-aided models for III-V compound semiconductor devices. In this work, we have developed analytical models for uniformly-doped HEMTs as well as delta-doped HEMTs and numerical models for homojunction as well as heterojunction III-V compound semiconductor devices, including the MESFET, HEMT, and HBT. For analytical modeling, we started by deriving an analytical nonlinear charge control model, in which the nonlinear dependence of the effective offset distance of the 2-DEG from heterojunction on externally applied bias is accurately described. For numerical modeling, we developed a general purpose two-dimensional semiconductor device analysis program based on a novel finite-element discretization method. These models, which could be used as design and characterization tools, provide a better understanding of device physics and a basis for further development of sophisticated analytical and computer-aided models required for accurate performance evaluation of high-frequency and high-speed VLSI devices and circuits based on state-of-the-art III-V compound semiconductor technologies for full realization of their potentials. |
