| Modern microwave device technology aims at the realization of smaller and faster circuits. As the device size shrinks, the transit time of the carriers becomes comparable to the characteristic relaxation times and to the period of the electromagnetic (EM) wave propagating along the device width. In order to incorporate the short-gate effects and the EM wave effects, a full-wave methodology is needed to include and account for device-wave interactions.;Successful numerical simulations of typical microwave GaAs metal-semiconductor field-effect transistors (MESFET) devices with 0.2 ;The full-wave model couples three-dimensional solutions of the electric and magnetic fields to a self-consistent electron transport model which is based on the hydrodynamic equations. In this dissertation, the numerical solution methods are based on the finite-difference (FD) formulations. To overcome the computational intensity of the full-wave model, parallel algorithms were developed, and the numerical simulations were performed on a massively parallel machine (MasPar). |
