Research On The Model And Circuit Of InP HBT Device

InP material has inherent advantages such as high frequency characteristic andlower lattice mismatch with InGaAs, making it suitable for millimeter-wavecommunication system. The focus of this dissertation is on the development of InPdouble heterojunction bipolar transistor(DHBT) small signal model, large signal modeland microwave circuit design. The main details of this work are summarized as follows:1) A small signal model is established of InP HBT. To begin with the basic of InP,the working principle and device characteristics of HBT is firstly introduced, leadingto the conclusion that HBT device could get both ultra high-speed and high gain. Thenthe small signal model topology is established, and the model parameters are extractedin many steps. The device in this paper is Stepper C07whose emitter size is0.6μm×7μm. Finally we get the exact small signal model by verifying the S parameters.2) A large signal model is established of InP HBT. By comparing so manybusiness models, we choose Agilent HBT model, of which characteristics is similar toInP HBT, to establish large signal model of our device. Firstly, the pad of the deviceshould be de-embedded by the Open/Short pattern. Then the extrinsic resistance areextracted. Secondly, the extraction for the current parameters are performed. Finally,the delay time are extracted by the S parameters.3) Small signal circuit is designed using the InP HBT model. The purpose is toverify the accuracy of the model we established. The matching point is found out todesign the matching network. Finally S parameter is obtained by the simulation anddebugging. The gain of the circuit is15dB at10GHZ, showing a satisfactory result.