Design, analysis, and macroscopic modeling of high speed photodetectors emphasizing the joint opening effect avalanche photodiode and the lateral p-i-n photodiode

This research can be separated into three phases. Phase 1 involved tailoring the macroscopic simulator to capture the relevant device physics associated with the devices under investigation. Phase 2 involves the simulation of advanced commercially engineered photodetectors. Phase 3 entails the introduction and subsequent investigation of novel high gain and unity gain photodetector designs.; Two model enhancements were made during the first phase of the research. The first was the inclusion of the smooth boundary condition. This boundary condition allows for the prevention of abrupt non-physical potential transitions along the surface of the device. The second was the implementation of the Schottky boundary condition including tunneling.; Phase 2 brought about the investigation of the theorized standoff avalanche photodiode design. The goal of this research is to determine the feasibility of this design with respect to its ability to suppress edge breakdown. This required the characterization of the design space along with determination of the breakdown sources. Metal-semiconductor-metal photodiodes are also investigated to gain insight into the operation of low gain and unity gain photodetectors suitable for monolithic integration with optoelectronic circuitry.; Pursuant with the goals of Phase 3, two new families of photodetector designs are introduced. For unity gain detection, the novel lateral p-i-n photodiode is introduced. Subsequent research lead to the addition of two more novel designs. The heterojunction and buried layer lateral p-i-n photodiodes were designed to enhance the carrier transit time. For comparative purposes, these devices are investigated alongside the geometrically similar metal-semiconductor-metal photodiode.; For high gain applications such as repeaters in long haul, high bit rate telecommunications systems, the novel joint opening effect avalanche photodiode is introduced. The joint opening effect is an alternate design methodology, which has spawned a number of additional novel application specific designs. This includes the introduction of a potentially high yield, fully planar joint opening effect superlattice avalanche photodiode. The potential benefits of the joint opening effect design methodology include the possibility of lower capacitance, lower surface electric field, edge breakdown suppression, lower dark currents, higher bandwidth operation, higher yields, and longer device lifetimes.