Modeling and characterization of silicon carbide power devices

Circuit simulator models are developed for the silicon carbide (SiC) power PiN diode, Merged-PiN-Schottky (MPS) diode, Schottky diode, and Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET). The models accurately describe the temperature dependence of on-state characteristics and switching waveforms.; The power diode models are verified for the temperature dependence of the on-state characteristics, and the forward current, di/dt, dv/dt, and temperature dependence of the reverse-recovery characteristics. The devices are characterized using a specially-designed test system for SiC power diodes that can emulate a wide range of application conditions by independently controlling the applied reverse diode voltage, forward diode current, di/dt, and dv/dt at turn-off. The test system is designed for low inductance and low capacitance, while maintaining high voltage (5 kV) and high current (40 A). A behavioral model of the test system is implemented to simulate and validate the models. The models are validated for a wide range of application conditions for which the diode could be used.; A detailed parameter extraction sequence for the silicon carbide (SiC) power diode model is also presented. The extraction sequence is applicable to any SiC diode technology, including JBS, Schottky, and PiN power diodes. Extraction software is presented for extraction of the on-state parameters and the transient charge decay parameters.; Also, a compact circuit simulator model is used to describe the on-state and switching performance of the SiC power Double-implanted MOSFET (DiMOSFET). The model is developed and validated over temperature and for different switching speeds. The model is demonstrated for both SiC and silicon technologies. Parameter extraction and automation software is developed and demonstrated for the MOSFET model.