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Josephson-CMOS hybrid memories

Posted on:2008-03-11Degree:Ph.DType:Dissertation
University:University of California, BerkeleyCandidate:Liu, QingguoFull Text:PDF
GTID:1448390005974090Subject:Engineering
Abstract/Summary:
Lack of high-density, fast and memory has been a long-standing problem in superconducting digital electronics. Alternative Josephson-junction-based memory cells and peripheral circuits have intrinsic problems which impede the application of that kind of memory. The CMOS-Josephson hybrid memory idea was proposed in 1992 to circumvent this problem. Evaluation of some issues was carried out in the 1990's. In the present work we have designed and demonstrated a 64-kb CMOS-Josephson hybrid memory working at 1 GHz; it has proved to be a promising memory candidate for superconducting high-end computing applications.; In order to make the hybrid idea practical, a complete and comprehensive 4 K short-channel CMOS model for digital circuits was developed for this dissertation. It has been used in the design of the memory core and peripheral circuits. A fast hybrid interface circuit that transforms single-flux-quantum millivolt 2-ps pulse signals to CMOS volt-level signals has been studied and the optimized design has been completed. Using a nonvolatile cryogenic 3-T DRAM cell, the memory core is designed in such a way that the access time is much less than for room-temperature operation, not only because of the performance upgrade due to the temperature decrease, but also because of a different reading mechanism. Fabricated by commercial submicron CMOS processes (0.25 mum and 0.18 mum) and a Nb/AlOx/Nb Josephson-junction process with 2.5 kA/cm2 tunneling current density, the memory chips were bonded together by direct wire-bonding and by flip-chip bump-bonding and tested at low frequencies, high frequencies, respectively. A subnanosecond access time is obtained both from simulations and experiments. The power for an interface circuit is measured to be 0.6 mW. The memory core consumes even less power. The total power consumption depends on the operation mode of the memory and is calculated to be 10 mW for reading and 28 mW for writing. Simulations also indicate that, with more advanced semiconductor and superconductor technologies, larger and faster hybrid memories are expected to be achievable in the future.
Keywords/Search Tags:Hybrid, Memory, CMOS
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