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Study On The Optimization Of Barrier Cobalt Chemical Mechanical Planarization

Posted on:2018-07-10Degree:MasterType:Thesis
Country:ChinaCandidate:X Z LiFull Text:PDF
GTID:2428330596957831Subject:Microelectronics and Solid State Electronics
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Integrated circuit is the foundation of manufacturing industry and it is an important symbol of comprehensive strength of a nation,chemical mechanical planarization(CMP)is one of the key process for IC fabrication,it is the only technique to achieve global and local planarization.At the same time,barrier CMP is the last step of copper interconnects CMP,and it directly decides the yield and reliability of an IC device.The electrochemical experiments,polishing experiments and static corrosion experiments were adopted in this paper.And the effect of slurry pH and components on the galvanic corrosion between cobalt and copper,the removal rate and the static corrosion rate of cobalt and copper were systematically studied as follows.Firstly,for cobalt barrier suffered seriously galvanic corrosion with copper in CMP,the effect of slurry pH and components which included oxidizer,chelator and activator on the galvanic corrosion between cobalt and copper.By controlling the Co/Cu surface passivation and oxidation degree,galvanic corrosion potential difference between the Co/Cu was greatly reduced and the galvanic corrosion between the Co/Cu was effectively controled.Secondly,for the difficult control of removal rate ratio of cobalt and copper,and serious static corrosion in CMP,the effect of slurry pH and components on the cobalt CMP and static corrosion between cobalt and copper were studied.By adjusting the pH and concentration of components of the slurry,controlling the Co/Cu surface passivation and oxidation status,Co/Cu removal rate ratio and static corrosion of Co/Cu wwere effectively controled.
Keywords/Search Tags:cobalt, CMP, alkaline slurry, galvanic corrosion
PDF Full Text Request
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