Simulation&Fabrication Of Key Components Of Ultra High Resolution TES Detector

The transition edge sensor(TES)is one of the most critical core components of ultra-high resolution detectors.It has a good promise in defense technology,nuclear energy development,nuclear security,anti-terrorism,nuclear collection,cosmology and other fields.Its successful development has played a major role in building highly sensitive and high-resolution advanced particle detection systems.This paper focuses on the TES sensor structure design,energy deposition law,preparation process,performance evaluation and other related issues.We mastered key technologies for the development of TES sensors by the theoretical simulation and experimental evaluation.?TES sensor structure.Based on the existing foreign technological research conclusions and two-layer superconducting films such as Mo/Cu,Au/In,Ti/In,and Ti/Au,the possible process risks in the development process have been explored and controlled,The key factors that influence the superconductivity of the device has been analyzed,and the structural parameters such as TES double or multi-layer superconducting films,support,and electrical signal extraction were obtained;? The mechanism of energy deposition and heat transfer.First,the analysis and assessment of the physical model of energy deposition are carried out,and the modeling parameters are optimized and determined.The dependence of the multiple gamma-ray energy and deposition energy within the range of 20 keV-200 keV of the plutonium material is calculated.Secondly,for the same absorber material with different sizes or substrate structures,60 keV,660 keV y-rays as input conditions,analyze the influence of incident energy,absorber size,substrate structure on the energy deposition;based on this,by finite element analysis and noise analysis methods are investigated the conduction law of thermal energy in TES devices,preliminary evaluation of the factors that high the sensitivity of ultra-high resolution gamma ray detectors;?Fabrication of superconducting films.The effects of preparation temperature and working pressure on the growth of Ti,Mo,Cu and other single-layer films were studied by magnetron sputtering method.The preliminary process conditions for the preparation of Cu/Mo and Ti/Au bilayer films on the mask were obtained.The molecular beam epitaxy device was used to establish the relationship between substrate temperature and Ti/In bilayer film growth state,and basically obtained the technical conditions for preparing Ti/In,Au/In,and Ti/Au bilayer films;?performance evaluation,including physical properties with superconducting properties.Firstly,the surface morphologies and physical properties of superconducting thin films were characterized using scanning electron microscopy,X-ray diffractometry,and a comprehensive physical property measurement system.The influence of growth parameters of superconducting thin films on' the quality and the superconducting transition temperature of Ti/In was evaluated;Secondly,the optimal process parameters for the preparation of higher quality superconducting thin films were optimized,and a Ti/Au double superconducting thin film with a superconducting transition temperature of 300 mK was obtained,further verifying the rationality of the process parameters was selected.At the same time,a series of Ti/In superconducting thin films were grown by using molecular beam epitaxy.The control rules between the superconducting temperature and the Ti-In thickness ratio of the Ti-In bilayer thin film was experimentally established.The results show that the superconducting transition temperature of Ti/In film is 645 mK,and the superconducting transition temperature of Au/In superconducting film is 365 mK.For the same absorber,the higher the incident photon energy,the smaller the detection efficiency.The research results provide reference for the successful development of TES devices with excellent performance,which can be used as a reference for superconducting membrane preparation process technology,and help to accelerate the commercialization process of ultra-high resolution detection systems.The results show that we have mastered the regulation of the superconducting transition temperature of Ti/In films and succeeded in obtaining a superconducting Ti/In superconducting film with a superconducting transition temperature of 645 mK.An Au/In superconducting thin film with a superconducting transition temperature of 365 mK was obtained after replacing the thin film deposited material;For the same absorber,the higher the incident photon energy,the lower the intrinsic detection efficiency;The suspended substrate structure is more dominant than the solid substrate structure in the detection of the energy spectrum.The research results provide referenceable superconducting film preparation process technical parameters for successfully developing TES devices with excellent performance,which helps to shorten the commercialization process of ultra-high resolution detection systems.