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Preparation And Luminescence Properties Of Porous Silicon/Zinc Oxide Composite Films

Posted on:2021-03-15Degree:MasterType:Thesis
Country:ChinaCandidate:W Y NiFull Text:PDF
GTID:2428330611496425Subject:Electronic Science and Technology
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Nowadays,porous silicon and zinc oxide are widely used in semiconductor luminescent materials because both of them have photoluminescence,and both of them have high luminescence intensity,which also makes them have excellent practical prospects in the field of luminescence.Porous silicon is combined with zinc oxide to produce a porous silicon/zinc oxide composite material,which can cause the luminescence properties of the two materials to be excited together and produce superposition.At last,white light is emitted.The emission of white light is of great significance for semiconductor light-emitting devices.In this paper,porous silicon was prepared by metal-assisted chemical etching with the porous silicon as the substrate,and then sol-gel was used to compound porous silicon with zinc oxide.Finally,SEM,XRD and PL spectra were used to test the porous silicon/zinc oxide composite film.The results show that:(1)Metal-assisted chemical etching successfully prepared porous silicon substrates with different parameters,and then sol-gel was used to successfully prepare different porous silicon/zinc oxide composite films.(2)In the preparation of porous silicon,the concentration of silver ions in the deposition solution was 0.03mol/L,and the etching time was 20 min.When the porous silicon/zinc oxide composite film was annealed at 800?,the surface morphology of the composite film was relatively flat with the best grain density,the strongest diffraction peak and the occurrence of c-axis preferred growth.(3)All porous silicon/zinc oxide composite films have formed photoluminescence belts in the visible region and presenting white light emission.In the preparation of porous silicon,the concentration of silver ions in the deposition solution was 0.03mol/L,and the etching time was 20 min.When the porous silicon/zinc oxide composite film was annealed at 800?,we can see that Zn O with these parameters exhibited deep level defect luminescence and superposed with porous silicon luminescence,resulting in high luminescence intensity in the visible region and stable white light emission through spectral peak spectrum.
Keywords/Search Tags:Porous silicon, Zinc oxide, Metal-assisted chemical etching, Whit light emission
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