The Study On The Hot-Carrier Effect In Deep Sub-Micron MOSFET

ABSTRACTThe hot-carrier effect in deep sub-micron MOSFET has been studied in this thesis, with main emphases on the following aspects: the two-dimensional analytic distribution modeling of the substrate current and the drain current; the analytic distribution modeling of the injection current and the gate current; the modeling of the hot-carrier-induced MOSFET degradation; the hot carrier effect in grooved-gate MOSFET; the effect of hot carrier effect on the analogue parameters of MOSFET.