Study On Control Of The Current, Heat And Optical By Stepped Material In Optical-Electron Devices

Semiconductor laser is one of important devices in the electric apparatus and electrical engineering detection system. The current,heat and optical can be controlled by the stepped material in semiconductor laser and other optical-electron devices. The heat from the current can be leaved off quickly and make the devices work in proper temperature. The development of hetero-junction laser, quantum well and vertical cavity surface emitting lasers (VCSELs) made by the stepped materials are introduced,the application of semiconductor laser in electric apparatus is summarized and the finite element method (FEM) and finite-difference method(FDM) are overviewed in this thesis. A software for simulation the optical field in the two, three ant-reflectivity films, DBR and VCSELs is studied. The reflectivity and optical distribution in space can be given and the maximum of light can be found by the software. The dissipation of heat is researched and distributions of heat in space are presented by FEM in high power semiconductor laser array optical electron devices with rectangle, concavity heat sinks and micro-channel heat sinks. The results showed that the temperature will decreased with the thick of the heat sink in which the flowing water is a cooler provided a constant temperature, and the temperatures are not uniform. The temperature,special in the edge of high power laser array which connected with heat sink,can be dropped by the concavity heat sink, which will defend the devices from high temperate. The distance of micro-channel heat sinks is also designed. The simulation software for confined the current and cooping of optical with heat in VCSELs with the aperture radii from 0.6 to 10μm is designed, after the second order differential equations are solved with FDM. The electric potential, carrier, optical and heat fields in the proton implantation and single oxide confined VCSELs and I-P characteristics have been given. It shows the proper confinement radium is about 2μm. The reason that the threshold of single oxide confined VCSELs is superior to the proton implantation VCSELs is explained.