Theoretical Study Of Carriers And Optical-field Distrubutions Characteristics In Vertical-cavity Surface-emitting Lasers

Currently quantum well VCSEL (Vertical Cavity Surface Emitting Laser) is one of the most active research problems in the field of optoelectronics. It has more advantages than edge-emitting laser, for example, it has very lower threshold current, smaller far-field divergent angle, higher modulating frequency, and it's easy to realize single longitudinal mode operation and 2-dimension integration etc. So it is widely used in the fields such as fiber communication, light-information processing, lasers print and light-sensor etc.In this paper, we give a direct coupling, quasi-3-dimesion model. Using this model, we analyzed the distributions of the equipotential lines, current density, carriers concentration and optical fields in the quantum well VCSEL. We also analyzed the correlative characteristics and their influences with each other.The specificwork can be summed up as following: we found the self-consistent solution of the equation of Poisson, carriers diffusion and optical field. We first calculated the equipotential lines distributions, then found the distributions of the injected current density, carriers concentration in the active region. Second we studied the influences of N-DBR, different position and thickness of the oxidized region, different radius and ratio of the emitting window, and gave the distributions of equipotential lines in the laser with double oxidized regions. Finally, we realized photoelectricity coupling and gave the optical distribution near the threshold. The results show that the theoretical calculations well match the experimental results.