Modeling High-power IGBT And Transient Analysis

From the late eighties to the early nineties, IGBT become a new composite device, which brings together the advantages of MOSFET and GTR. Such as input of high-impedance, high speed, good value of thermal stability, voltage-driven (MOSFET's advantages, to overcome the shortcomings of GTR), and also having a low on-state saturation voltage, carrier density, a development into high-voltage and high-current(GTR advantages to overcome the shortcomings of MOSFET) and other comprehensive advantages. So IGBT has been played a most important role in nowadays electronic devices.The first chapter introduced the development of power electronic devices, and analyzed IGBT's internal structure and functions in detail. This chapter expounded the main set from the first penetrating the through plane gate (PT)-type IGBT to non-punch through planar gate (NPT) type IGBT, then trench gate type IGBT and field stop layer technology development, and contrast them from the structure, properties, technology.The second chapter described the basic characteristics of IGBT in detail, including static characteristics, dynamic characteristics and high temperature characteristics. In the static characteristics, the chapter analyzed the output characteristics and the transfer characteristics of IGBT; In the dynamic properties, the chapter analyzed switching characteristics of IGBT by testing in detail; In the high temperature characteristics, through testing the change of different temperatures on the transient characteristics, conclude the effect of IGBT's temperature on it's function.The third chapter made a detailed theoretical analysis of the IGBT drive circuit, and mainly from the driving voltage and driving resistance.The fourth chapter as the main part of the paper,Firstly, proposed a transient IGBT model, and gives the IGBT switching process on loss in the generation and calculation methods; Secondly, this chapter used the lab's new equipment to analysis the IGBT switching characteristics, and gives the experimental testing methods and calculation methods; Thirdly, testing static parameter by the BR3500 system, gives the corresponding conclusions; Finally, through the combination of the above methods and conclusions, summarized the IGBT selection steps.The Fifth Chapter by analyzing the theory of 12kW inverter circuit works, concluded the cause of IGBT turn-off voltage spike and the harmful, proposed an improved snubber circuit. By simulation experiment, simulation of actual conditions, achieve the desired results. The paper is aided of the "Eleventh Five-Year Plan national support issues-new power electronic devices and power electronics integration technology," two three sub-topics, and cooperated with MacMic Science & Technology Co., Ltd. and Xi'an Jiaotong University...