Research On Interconnect Structure Modeling And GaN HEMT Thermal Analysis Method In Advanced Packaging System

In recent years,with the continuous development of advanced packaging technology,advanced packaging technology centered on Chiplets heterogeneous integration has become a key path and breakthrough for the development of integrated circuits.In advanced packaging systems,microwave and millimeter-wave heterogeneous integration technology integrates high-performance III-V compound circuits with silicon-based circuits through heterogeneous components and heterogeneous interconnects,breaking through the limitations of a single semiconductor material,and is an important development direction for integrated circuits in the "post-Moore era".Among them,GaN,a representative of III-V compounds,has high electron mobility,high electron saturation rate,wide bandgap(about 3.4 e V),high breakdown electric field,and so on,making GaN HEMT devices have great application prospects in the field of semiconductors.Therefore,this paper is devoted to exploring the device modeling research in advanced packaging systems under heterogeneous integration technology,and a series of studies have been carried out on the related issues of interconnect technology in high-density heterogeneous integration environments and the packaging of GaN HEMT devices.The specific research work is as follows:This thesis studies the de-embedding techniques,signal integrity,and broadband circuit modeling of interconnect structures in heterogeneous integration processes.It mainly includes an analysis of de-embedding techniques in interconnect structures,a comparison of the accuracy under different de-embedding techniques,and the validation of the accuracy of de-embedding techniques in the microwave and millimeter-wave frequency range(0.1GHz-50GHz)through simulation and test data in heterogeneous processes.The signal transmission characteristics of heterogeneous integrated interconnect structures are analyzed,including substrate loss and transmission performance analysis under different structural sizes,which illustrate the integrity of high-speed radio frequency signals during transmission.The broadband equivalent circuit model of the interconnect structure is established,simulated,component parameters extracted,and compared with test data,verifying the accuracy of high-precision equivalent circuit models in the microwave and millimeter-wave,and realizing the rapid evaluation of the electrical characteristics of interconnect technology in silicon-based heterogeneous III-V integration.This thesis focuses on the thermal characteristics of GaN HEMT devices and their packaging.It mainly includes thermal modeling,simulation,and analysis of GaN HEMT devices,completing the initial evaluation of the devices.Furthermore,by studying the temperature-sensitive materials,the accurate evaluation of the thermal characteristics of the devices is achieved,providing a solid basis for the reliability and stability analysis of GaN HEMT devices.Thermal network analysis is also carried out for GaN HEMT devices,and the formula for thermal resistance and thermal capacitance is analyzed,deduced,extracted,and verified by simulation using the physical base analysis method,ultimately realizing the rapid and accurate characterization of the thermal characteristics of the devices.Additionally,the thermal management of the device packaging structure is analyzed,and the thermal simulation analysis of power devices is carried out using two different package shells(TO-220 FL and TO-220),comparing the thermal distribution of the devices under different packages,and finally completing the evaluation and optimization design of the device packaging thermal management.This thesis also focuses on the nonlinear circuit modeling of high-power GaN HEMT device packaging shells.By designing a metal ceramic packaging shell,the model building,thermal analysis,and electromagnetic analysis are carried out.At the same time,a broadband circuit model is constructed and parasitic factors are extracted.According to the impact of temperature on the material’s own properties,the nonlinear difference in the impact of temperature on the RF characteristics is analyzed.By optimizing the circuit element parameters,a high-efficiency,fast,and accurate thermal-electromagnetic coupling nonlinear circuit is ultimately realized.In conclusion,this thesis focuses on the modeling of interconnect structures and GaN HEMT device packaging based on advanced heterogeneous integration process in the state-of-the-art packaging system.The research results have high theoretical significance and engineering value in the field of advanced packaging and heterogeneous integration.