Thermal Resistance Measurement System Of GaN HEMT Device Based On Rapid Electrical Heating And Electrical Detection

GaN devices are high electron mobility transistor(HEMT)devices,which have AlGaN and GaN-based devices.GaN devices have been widely used in aerospace,computer signal processing,radar,electronic communication and other fields,because of their excellent electron mobility,band gap,high frequency,high temperature,high power and other characteristics.However,GaN devices have high power density and high operating temperature in the active region.Long-term high temperature will affect the performance and reliability of the devices.Therefore,accurate,nondestructive and rapid detection and analysis of temperature rise and thermal resistance of GaN devices has become an urgent problem in scientific research and industrial fields.With the continuous development of the structure and packaging forms of GaN devices,the thermal design requirements of GaN devices are also increasing.Therefore,the research on the temperature rise and thermal resistance measurement technology of GaN devices has important practical value for the thermal packaging design and reliability design of GaN devices.In this paper,electrical measurement method is used to measure the temperature rise and thermal resistance of GaN devices.A nanosecond response time GaN device driver and a high-speed acquisition and control software are designed and developed,and the relevant thermal resistance algorithm is optimized.The following works are mainly completed:1.the way of heat transfer on the GaN devices,principle of measurement of the junction temperature and thermal resistance are studied,using the thermal resistance of electrical measuring method,through electrical temperature sensitive parameters measurement of transient temperature response curves,combined with the structure function method,push the math model of resistance measurement of thermal conductivity,using Fourier deconvolution and Foster thermal network model to Cauer thermal network model conversion method.2.improve the electrical measurement method of thermal resistance,improve the measurement accuracy of GaN device thermal resistance by improving the switching response time and data acquisition speed of GaN device driving source.Is proposed based on the ARM-the Cortex M3 kernel rapid electrical heating,rapid electrical detection of GaN devices thermal resistance measurement system,implements the drive source of high precision output with GaN components and the working state of switch,and cut the response time of driving source in nanoseconds,more accurate measured the change of the transient temperature response curves.3.The upper computer acquisition and control software and GaN device thermal resistance measurement software are developed to realize the acquisition of the transient temperature of GaN device and the processing of thermal resistance data.The correctness and feasibility of the thermal resistance measurement software are verified by comparing with the data measured by the T3 STER of Ming-Tao Company in the United States.