Study On Performance Of Resistive Random Access Memory Based On AlN

The flash in traditional non-volatile memory has gradually been unable to meet the needs of modern technology development,and people urgently need to find new alternatives.Among the many candidates,resistive memory memory stands out due to its advantages such as low power consumption,high erasing speed,and simple architecture.Among the many candidates,the resistive memory stands out,which has the advantages of high erasing and writing speed,low power consumption,and simple structure.In recent years,resistive memory has been successfully used in areas such as logic circuits and neuromorphic computing.In this paper,for AlN-based resistive memory,Ti and Pt are used as electrodes,and its resistive mechanism and the possible influence of impurities in the experimental preparation process will be explored.In this paper,the performance and working mechanism of Ti/AlN/Pt resistive memory are studied by the calculation method based on first-principles calculation.Firstly,the number of layers of Ti,Pt electrodes and resistive switching layer AlN is determined by LDOS and surface energy calculation.Then,the interfacial distances of Ti/AlN and AlN/Pt interfaces were determined by the calculation of binding energy,and the device model was finally determined.After the device model is determined,the I-V curve of the device is calculated by Dmol3,in which the threshold voltage of turn-on is about 1.7 V,the threshold voltage of turn-off is about 0.6 V,and the switching ratio is greater than 104.Through the calculation of electrostatic potential,DOS,electron density,etc.,it is determined that the resistance-switching mechanism of the device is the formation of conductive filaments by nitrogen vacancies.The influence of the O impurity present in the experiment on the IV characteristics of the device and the microscopic origin of the influence are discussed.After doping one O atom,it is found that the turn-on threshold voltage of the Ti/O:AlN/Pt device is reduced to 1.5 V by calculating the IV characteristic curve,and the on-off ratio is improved by an order of magnitude.The reasons for the effect of O doping on device performance were investigated by calculating nitrogen vacancy formation energy,electron local density and migration barrier.It is found by calculation that the formation energy of nitrogen vacancies decreases after the introduction of O atoms,and the closer it is to the O atoms,the more it decreases.O doping promotes the formation of nitrogen vacancies.By calculating the local density of electrons,it is found that electrons are concentrated at the positions of nitrogen vacancies,and O doping leads to the accumulation of higher concentrations of electrons,resulting in the elimination of redundant conduction paths.By calculating the migration barrier of nitrogen vacancies in AlN,it is found that O doping can reduce the migration barrier of nitrogen vacancies and the migration occurs most easily near O atoms.Finally,by analyzing the migration path tendency of nitrogen vacancies,it is found that the migration barrier towards the O atom is smaller than the migration barrier away from the O atom,and the nitrogen vacancy is more inclined to migrate to the vicinity of the O atom,which makes the conductive filament preferentially doped in O Grows near heterosites.In summary,in this paper,the performance and resistance switching mechanism of AlN-based resistive memory are studied,and the influence of O doping on the performance parameters of the resistive memory and its microscopic origin are explored.It is found that O doping can promote the The formation of conductive filaments reduces the potential density of conductive filaments and improves uniformity.This study provides some theoretical guidance for the research and performance improvement of AlN-based resistive memory.