Performance Regulation And Mechanism Research Of Chitosan-based Organic Memristor

The amount of data information being processed has skyrocketed with the advancement of technology,resulting in more and more stringent requirements for memory.Memristors have been studied in many fields,which has pointed out a feasible direction to break through the challenges of the traditional Von Neumann structure and to match the rapidly developing semiconductor technology.For example,as an application in the storage field,RRAM has the characteristics of non-volatility,multi-level data storage,and low energy consumption.It is promising to challenge modern universal memory.Among memristive materials,biomaterials have the advantages of low cost,green environmental protection,non-toxicity,degradability,and biocompatibility.In this paper,the biomaterial chitosan is used as the medium layer,which is matched with the alumina modified layer.By exploring the device structure and adjusting the parameters such as electrode matching,protection current,thickness,a RRAM memristive device with excellent performance based on AlO_x/chitosan was fabricated and a mechanism model of double oxygen vacancy conductive filament was established.The specific research contents are as follows:1.After comparing the electrical properties of the chitosan devices with three different structures of crossbar type,planar type and crosspoint and adjusting the parameters,Al/chitosan/ITO with good resistance switching properties was obtained.However,the bubbles escaping from the surface of the Al electrode,which causes irreversible damage to the device performance and affects the lifetime and yield of the device.2.In order to inhibit the escape of oxygen and improve the performance,research starts from two directions of the electrode and the modified layer.By adjusting the electrode type and thickness,modifying the electrode to change the device structure.By inserting a modification layer between the top electrode and the dielectric layer,the escape of bubbles and the physical deformation of the electrode surface are relieved.Among them,the alumina deposited by the ALD method can well limit the bubbles and improve the cycle tolerance to a certain extent.3.For the Al/AlO_x/chitosan/ITO device structure,the performance was improved by adjusting the parameters such as alumina thickness,chitosan thickness,and protective current,or the physical mechanism model of the device was explored and established corresponding.The study found that the 4 nm thick aluminum oxide layer confines the bubbles while also improving the memristive performance,with high on-off ratio,low and densely distributed operating voltage,excellent maintenance characteristics,stability,and maintains good cycle tolerance.In summary,we obtained a memristive device with excellent performance based on Al/AlO_x(4 nm)/chitosan/ITO,and successfully established a mechanism physical model based on the joint action of alumina and chitosan double oxygen vacancy conductive filaments.