Simulation Research On The Mechanism Of Resistance Transformation Of Resistive Memory Element Based On BST Films

With the increasing demand for computer information storage and processing,the new type of non-volatile memory has attracted more attention from many scientific research institutions.Among them,the resistive memory is expected to become a strong competitor of the next generation of memory due to its low power consumption,repetitive erasable,high density of memory cells,and good scalability.At present,scientists have found the phenomenon of resistance change in a variety of oxide materials,organic materials and other materials,including perovskite oxide has obvious advantages in performance,but it still faces many technical difficulties and challenges in the process of business transformation.For example,the resistance mechanism is not perfect enough,the atomic motion theory of the internal structure of the material is not unified,and the process simulation and theoretical analysis of the principle of the resistance change of research are relatively few.In view of the above problems,this paper mainly studies the resistance physical and microscopic mechanism of perovskite oxide(BST),including:(1)Pt/BST/Ti N/Pt type resistive memory cell structure is adopted.The MATLAB software is used to establish a random model based on the oxygen vacancy conduction channel.The Monte Carlo method is used for the generation,migration and recombination of oxygen vacancies in the model.And conduction mechanism uses trap-assisted tunneling combined with resistance network.(2)The process of Forming,Set and Reset of the resistance change memory cell was successfully simulated,and the oxygen vacancy distribution,potential distribution,current-voltage curve and resistance probability distribution of the resistance change layer were obtained.The model explains the simulation mechanism of the BST resistive unit well and clearly reflects the microscopic changes inside the resistive unit.The Set and Reset processes of the resistive memory cell under multiple continuous cycle voltages are simulated,and the current-voltage curve and the high and low resistance values in multiple cycle periods are obtained.The current-voltage curve change process and the fluctuation trend of the high and low resistance states are studied.(3)The current-voltage curve of the resistive unit and the change trend of the high and low resistance states after applying multiple cycle voltages are studied.And for the thickness of the resistive layer,the original oxygen defects and the Set / Reset voltage,etc.,through the simulation to deeply study the impact of the above factors on the performance of the resistive unit,and explain the microscopic reasons according to the resistive mechanism.The selection and operation of the system have the function of guidance and prediction.