| With Moore’s law approaching the physical limit,non-volatile memory,mainly Flash memory,is faced with an insurmountable technical bottleneck in the process of feature size shrinking.Resistive random access memory（memristor）,as a typical representative of the next generation of non-volatile memory,has the advantages of simple structure,high density,low power consumption,fast read and write speed,and has been widely studied.The resistive performance of the ristor is closely related to its preparation method.The main preparation processes include magnetron sputtering,atomic layer deposition（ALD）,pulsed laser deposition（PLD）and the emerging non-vacuum coating methods in recent years.Among them,Sol-gel method is favored for its advantages of low cost,simple operation and large area film formation.In this paper,a ZrO2-based memristor was prepared by Sol-gel method,and its resistive performance was studied and the device was optimized.The main research work of this paper is as follows:（1）Resistive behavior of Ag/ZrO2/ITO memristor under different annealing atmospheres.Ag/ZrO2/ITO memristor with different annealing atmosphere was prepared by Sol-gel spinning coating single layer ZrO2 film.After undergoing oxygen annealing,the switching ratio of Ag/ZrO2/ITO memristor was about 60,with 50 cycles and the storage state remained unchanged within 3000s.XPS analysis shows that the oxygen vacancy concentration in the dielectric layer is the lowest after oxygen annealing for 5min,and the device performance is the best.Finally,according to the abnormal jump phenomenon of the device,the fitting analysis of the abnormal curve data shows that the reason of abnormal jump is the interference of oxygen vacancy.（2）Performance improvement based on NiO/ZrO2 memristor.By growing a layer of NiO film on ZrO2 film by PLD and preparing Ag/NiO/ZrO2/ITO memristor,the abnormal jump mentioned above no longer exists.Meanwhile,the switching ratio of the device is increased to 103,the number of cycles is increased to 250,and the retention time will not fail within 40000s,thus the device performance is optimized.（3）Performance improvement based on ZrO2:Mo S2 QDs memristor.Ag/ZrO2:Mo S2 QDs/ITO ristor was prepared by doping zero-dimensional material Mo S2 QDs into ethanol solution of Zr（C5H7O2）4.Compared with devices without Mo S2QDs,the VRESET operating voltage of the former is concentrated in the narrow region of-2.97V～-3.12V.The dispersion of the device is extremely optimized. |
