| With the development of communication technology,millimeter wave transceiver system is widely used.Power Amplifier is an important module in the front end of transmitter system,whose performance has a great influence on the communication quality of transceiver.Millimeter wave communication systems are developing towards miniaturization and full integration in recent years.Silicon-based technology is widely used in millimeter wave system design due to its easy integration and low price.With the increase of working frequency of millimeter-wave system,the influence of parasitic effect on millimeter-wave system also increases,and the performance of power amplifier at high frequency is also greatly affected.This thesis mainly focuses on the linearity,bandwidth and output power of power amplifier at high frequency.Based on the research of power amplifier at home and abroad,this thesis designs two power amplifiers according to different requirements of indicators:(1)The first is a Si Ge-based high linear broadband amplifier for 5G millimeterwave communication.The mechanism of the degraded inductance for AM-AM/PM compensation of the amplifier is analyzed in detail,and the degraded inductance is used to compensate the linearity of the amplifier to improve the linearity of the amplifier.The overall bandwidth of the amplifier is improved by using transformer matching.The amplifier achieves a flat gain of ±0.5d B in the 24-32 GHz frequency band;the PA achieves +2d Bm measured Pout at-25 d B EVM for a 250MHz-wide 64-quadrature amplitude modulation orthogonal frequency division multiplexing signal,the power back-off is only 6.2 d B compared to the saturation output power(2)The second is based on CMOS to achieve a D-band high output power amplifier.The core structure of the power amplifier selects a differential common source structure,and the neutralization capacitor is used to improve the gain and stability of the power amplifier.At the same time,the influence of common mode instability caused by the neutralization capacitor is considered,and the common mode stability problem of the power amplifier is solved by using a large gate resistor to supply power.Then,the power synthesis network of the high-frequency power amplifier was compared and analyzed,and a transmission line power synthesis network with low insertion loss and high amplitude and phase consistency between channels was selected.The gain of the power amplifier is 15.3 d B,the bandwidth is 15 GHz,the saturated output power is 14.14 d Bm,and the maximum PAE is 4.8%,which achieves higher power output and efficiency in the same frequency band. |
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