The Preparation Of MoS₂ Matrix Composites And Study Of Light Matter Coupling Properties

Since the discovery of graphene materials,TMDCs have become a hot topic due to their novel layered structures and interesting electronic properties.As a new type of 2D materials,MoS₂ with atomic layer thickness has rich optical and electrical properties,such as adjustable band gaps,strong light matter interactions,etc.However,the narrow absorption range and high carrier recombination rate reduce photoluminescence efficiency of MoS₂,limiting its further development in optoelectronic devices.At present,research on MoS₂ based composite materials will serve as a hot spot for improving their semiconductor structure and performance,further promoting the manufacturing of high-quality MoS₂ based optoelectronic devices.In this paper,uniform MoS₂/Ga₂O₃ composite films and MoS₂ based materials were prepared by two-step RF Magnetron sputtering.In this paper,MoS₂/Ga₂O₃ composite films and MoS₂ based materials were prepared by two-step RF MS.Based on the dependence of physical parameters of MoS₂,the relative numerical changes of physical parameters of MoS₂ films on different substrates as well as the photoelectric transfer,strain and charge doping levels on the surface or interface will provide a direction for optimizing the selection of various devices.The nonlinear optical properties of MoS₂on different substrates were analyzed.In order to deeply understand the nonlinear optical behavior,TA spectra of MoS₂ were introduced to further analyze the interfacial electron transfer.The main contents are as follows:1.The growth mechanism of MoS₂ and the interaction between MoS₂ and different substrates such as Ga₂O₃ were analyzed.By analyzing the SEM,XRD,and Raman spectra of MoS₂/Ga₂O₃,it was found that the morphology,growth orientation,and crystal structure of MoS₂ were affected by the Ga₂O₃ substrate.Compared to MoS₂ on Si substrates,it is found that the morphological changes of MoS₂ on Ga₂O₃,Zn O,Al₂O₃,FTO,Ag,Cu,and quartz substrates are due to the delayed phase transition of MoS₂from 1T to 2H.2.The linear photoexcitation mechanism of MoS₂ on different substrates and the electron transfer between MoS₂ and the substrates were studied.The electronic transition mechanism at the interface of MoS₂/Ga₂O₃ heterojunction was analyzed using UV visible absorption and PL spectroscopy.The enhancement of PL in MoS₂/Ga₂O₃heterostructures is mainly due to the transition from charged exciton recombination to exciton recombination.By analyzing the Raman shift,it was found that there were significant differences in the strain and electron concentration of MoS₂ on different substrates.The enhancement of PL in MoS₂ on different substrates is due to defect,which is actually a strain regulated enhancement behavior.3.The nonlinear absorption characteristics and corresponding relaxation mechanisms between MoS₂ and different substrates such as Ga₂O₃ were analyzed.The electron transfer characteristics of the MoS₂/Ga₂O₃ heterojunction under a built-in electric field were further confirmed by open-hole Z-scan measurements.The corresponding explanations for the relaxation time components captured by MoS₂ on different substrates are given.