Study On Electrical Parameters Of Silicon APD Irradiated By 1064 Nm Continuous Laser

When continuous laser irradiates silicon-based APD,the photoelectric performance of silicon-based APD may be reduced,which affects its application performance in laser guidance,laser protection and other systems.Therefore,the study on the influence of 1064 nm continuous laser irradiation on the electrical parameters of silicon-based APD has guiding significance for the development of silicon-based APD in laser protection,laser anti-interference and other application fields.In this paper,the temperature,output current,dark current and responsivity of silicon APD irradiated by 1064 nm CW laser are studied by theory,simulation and experiment.In terms of theory,the thermal model and electrical model of silicon-based APD irradiated by 1064 nm continuous laser are established through the theoretical analysis of the temperature,carrier concentration and transportation of silicon-based APD irradiated by1064 nm continuous laser.In the thermal model of silicon-based APD irradiated by 1064 nm continuous laser,the theoretical analysis of temperature during the interaction between1064 nm continuous laser and online silicon-based APD is realized.In the electrical model of silicon APD irradiated by 1064 nm CW laser,the output current model,dark current model and response model are established respectively,and the theoretical analysis of electrical parameters in the interaction process of 1064 nm CW laser and silicon APD is realized.Simulation: Based on theoretical research,the thermal simulation model,output current simulation model and dark current simulation model of silicon APD irradiated by1064 nm continuous laser are established.The thermal simulation model was used to calculate the temperature change of the center point on the surface of silicon APD irradiated by 1064 nm continuous laser.The output current of silicon APD irradiated by 1064 nm CW laser is calculated by electrical simulation model.The dark current simulation model calculates the dark current under different bias voltages.Experiment: The experimental platform of silicon APD irradiated by 1064 nm CW laser is built.The temperature rise,output current and other online experiments are carried out,and the dark current and responsivity are studied offline.The relationship between the temperature,output current,dark current and responsivity of the center point on the surface of silicon APD irradiated by continuous laser and the laser power density,action time and external bias voltage is obtained through experiments.Compared with the simulation results,the rationality of the thermal model and electrical model of silicon-based APD irradiated by 1064 nm continuous laser is verified,and the influence of the motion law of photogenerated carriers on the plateau period of output current under the condition of external bias is emphatically analyzed.