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Preparation And Performance Of Transition Metal Doped TiN Thin Films

Posted on:2023-12-10Degree:MasterType:Thesis
Country:ChinaCandidate:Y M WangFull Text:PDF
GTID:2530306623996049Subject:Optics
Abstract/Summary:
With the increasing prominence of global energy problems and the rising awareness of human environmental protection consciousness,new green buildings have gradually entered the public eye and developed rapidly.As a new type of green building material,low-emission coated glass plays an important role in saving building energy consumption.This paper uses the TiN film with excellent optical properties and wide application as the research object,and prepared Ta doped TiN thin film and Nb doped TiN thin film,respectively.The effects of sputtering power of doping elements on their optical and electrical properties were mainly studied.The preparation method of film was also improved to obtain low-emission films with good optical and electrical properties.In this paper,(Ti,Ta)N and(Ti,Nb)N thin film were prepared on glass substrates by DC reactive magnetron sputtering method,respectively.And attempted to improve the preparation method of(Ti,Ta)N thin film.The effects of doping element sputtering power on the optical,electrical,and low emission properties of the films were mainly investigated by X-ray diffractometer,Raman spectrometer,Vickers hardness tester,Scanning electron microscope,UV-VIS spectrophotometer,and Four probes.The specific research contents are as follows:1.The effects of Ta target sputtering power on the structure and optical properties of(Ti,Ta)N thin films were investigated.The results show that the Raman spectrum is deconvoluted into 5 Lorentzian peaks in the range of 50-1400 cm-1.All samples have Ta N acoustic mode peaks around 80 cm-1,which indicates that Ta has been doped in TiN.The peak positions and FWHM of different phonon modes changed as the sputtering power of Ta target increased,which may be related to the changes in lattice constant of films after Ta added to the TiN lattice,which would change the optical and electrical properties.It was found that the visible light transmittance of(Ti,Ta)N film could reach 40%.And the IR reflectivity is over 85%,demonstrating that(Ti,Ta)N films can be used in areas with strong sunlight and have energy saving effects,which are expected to replace TiN as a candidate substitute for Low-E glass.2.A simple improvement of conventional DC magnetron sputtering technology was carried out.The effects of Hemispherical Substrate Filter Magnetron Sputtering(HSFMS)technique on the structure and optical properties of(Ti,Ta)N thin films were investigated.The results show that although the HSFMS technology increases the infrared emissivity values of(Ti,Ta)N films,the presence of spherical substrate filter masks avoided the sputtering damage caused by high-energy particles to a certain extent.Which not only promoted the grain growth but also significantly improved the light harvesting effect of(Ti,Ta)N films(visible light transmission of rate more than50%),making the possibility of(Ti,Ta)N films for Low-E glass much higher.3.The effects of Nb target sputtering power on low emission properties of(Ti,Nb)N thin films were investigated.The results show that the amount of Nb added to TiN lattice and lattice distortion occurs with the increase of Nb target sputtering power.The addition of Nb causes a change in grain size since the Nb atomic radius is slightly larger than Ti.It is also observed that the intensity of the(111)peak gradually increases and sharp,which implies that the crystallinity of the film is gradually increasing with the doping of Nb.The sample at 80 W has the lowest resistivity(about30μΩ×cm)and visible light transmittance(over 40%),which is considered to have a good lighting effect and can be used for thermal insulation coatings in areas with strong sunlight.It can be seen that(Ti,Nb)N films have a certain potential for application in the field of low emissivity coatings.
Keywords/Search Tags:TiN thin film, Magnetron sputtering, Doping, Low emission thin film
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