The Study On Contact Characteritics Of Metal-nitrogen Oxygen Zinc Thin Film

Due to the rapid development of extensive research in transparent electronics,the development and application of transparent flexible electronic devices has become a new requirement.The new thin film material of ZnON is expected to meet this demand.ZnON thin film has become the focus of research due to its high carrier mobility,excellent optical and electrical properties,low temperature preparation,and abundant raw materials.This paper explores the effect of different process parameters on ZnON films,and characterizes ZnON films prepared under different processes.ZnON thin films were selected as semiconductor materials to fabricate ZnON Schottky barrier diodes?SBD?and ZnON thin film transistors?TFT?.The resulting ZnON SBD and ZnON TFTs were tested for electrical characteristics and the process conditions affecting device performance were explored.The specific content is divided into the following three parts:Firstly,ZnON thin films were prepared by RF magnetron sputtering.The ZnON films were prepared under different conditions by changing the process parameters such as oxygen-nitrogen flow ratio,sputtering power,and working pressure.The transmission spectra and square resistance of the films were measured.The results show that the flow rate of oxygen and nitrogen easily affects the light transmittance of ZnON film.With the increase of O₂/N₂,the content of N in ZnON film increases,the transmittance decreases,and the forbidden band width decreases.The relationship between the transmittance of the ZnON film and the sputtering power is that the sputtering power is increased,and the transmittance is relatively decreased.The relationship with the working pressure is that the working pressure is increased and the transmittance is increased.In addition,the increase of N content can reduce the square resistance of ZnON film.Secondly,ZnON SBD with Mo/ZnON/Mo parallel structure was prepared on glass substrate.ZnON and Mo thin films were prepared by magnetron sputtering method.The desired electrode patterns were formed by photolithography and etching to complete the preparation of ZnON SBD.The electrical properties of ZnON SBD were tested.The barrier height of the device was 1.03 eV and the ideal factor was 1.25.The effects of UV and substrate temperature on the device were also investigated.Finally,ZnON TFTs are prepared,the active layer is selected as a ZnON film,and the source and drain electrodes are selected as Mo metal electrodes.ZnON and Mo films were prepared by magnetron sputtering and ZnON TFTs were obtained by photolithography,etching and other processes.The ZnON TFT under different process parameters was tested with a semiconductor tester to obtain the transfer and output characteristics under different conditions,and the TFT characteristic parameters were extracted.From the analysis of the result data,the N₂ flux and sputtering power were increased,and the mobility of ZnON TFT carrier and switching ratio had an increasing trend.As the working pressure decreases,the mobility and switching ratio gradually increase.The optimum preparation parameters were as follows:Ar flow rate 15 sccm,O₂ flow rate 1 sccm,N₂ flow rate 80 sccm,sputtering power 120 W,the carrier mobility was 12.3 cm²V^-1s^-1,the switching ratio was 9.4×10⁴,and the subthreshold swing was1.79 V/dec,the threshold voltage is 2.67V.