Study On Preparation And AR Effect Of ITO Thin Film By DC Magnetron Sputtering

Transparent conductive oxide(TCO)films with have transparent and conductive characteristics,have been widely used in graphic LCD, solar battery electrodes, surface heaters, heat mirror, electromagnetic shielding and radiation protection. Indium tin oxide(ITO) films belong to transparent conductive oxide films. In this paper, ITO films have been prepared at room temperature, and measured and analyzed photoelectric properties and surface morphology by Ultraviolet - visible - infrared spectrophotometer, four probe resistance meter, AFM, XRD and SEM.In this paper, ITO film have been prepared and preparation technology has been optimized by DC magnetron sputtering. The target angle, O2 flow, sputtering time, sputtering power affect on the transmittance, sheet resistance and surface structure. The experimental results show that when the target angle is 23-25 degrees, the oxygen flow rate is 7-9sccm, sputtering time is 60～90 min and the sputtering power is 100～120W, transmittance of ITO thin films is more than 90%, and sheet resistance ranges from 10～20Ω/□. Sputtering time and sputtering power. Sputtering time and sputtering power influence crystalline degree of ITO films. When sputtering 60 minutes, plane (222) shows peak intensity. And when sputtering 120 minutes, ITO films have preferred orientations with planes (222) and (221).By heat treatment of ITO films, their transmittance and surface morphology are optimized. When small sputtering angle,7sccm oxygen flowing, greater sputtering time and power, transmittance reached 95% in visible range and the film surface smooth and dense.Prepare the SiO2 film by RF magnetron sputtering method on ITO films in Ar. Results show that, in the same process conditions, adjusting the sputtering time and sputtering power, transmittance of ITO have been improved. the increasing of transmittance increase first, and then decrease. when 15minutes sputtering time and 230W sputtering power transmittance gets maximum in visible range. Because of the high transmittance of ITO films, the transmittance of SiO2 nearly 100%.And surface of SiO2 smooth and dense. SiO2 improve ITO surface topography.