| In the past few decades,the development of wireless communication technology has been in full swing.A large number of wireless communication systems and protocols such as GSM,CDMA,WCDMA,TD-CDMA,CDMA2000,LTE,Zig Bee,Bluetooth and WLAN have emerged as the times require,promoting economic development and social progress.At present,the world is gradually stepping into the new generation(5G)of wireless communication era,our demand for high transmission rate,large capacity,and low latency needs to be met.As an important part of wireless communication receiver system,the RF front-end receiving module is mainly composed of RF switch and low noise amplifier.Among them,RF switch is often used to switch the transmitting and receiving path,low noise amplifier aims to amplify the weak RF signal received by the antenna,while not detoriating much of noise performance.The application of 5G communication puts forward more stringent requirements on the performance metrics such as noise figure,dynamic range,linearity and gain of the receiving module.The lower the insertion loss of the RF switch and the lower the noise figure of the low noise amplifier,the better the noise performance of the overall circuit.At the same time,the higher gain of the amplifier helps to suppress the noise generated by post-stage circuits such as mixers.Compared with bulk CMOS,Ga As p HEMT process has the advantages of low substrate loss,high electron mobility and saturation velocity,and good noise characteristics,which is very suitable for the design of RF switch and low noise amplifier.At present,5G communication is mainly arranged in the Sub-6GHz.In this paper,a0.25?m Ga As p HEMT process is used to design and implement an RF receiving front-end module chip with an operating frequency of 2.3-2.7 GHz.The receiving front-end is mainly composed of a single-pole double-throw(SPDT)antenna switch,a low noise amplifier(LNA),and a bypass(Bypass)switch,and has two working modes: LNA?EN and Bypass.When the signal power at the input end of the LNA is low,the LNA works normally and amplifies the signal without introducing more noise.When a higher power signal presents at the input port,the bypass switch starts to work and attenuates the signal to protect the post-stage circuit.Taking into account the difference in the power capacity of the transmitted and received signals,the SPDT switch is implemented with an asymmetric structure.On the one hand,the lownoise amplifier is designed using a cascode configuration with source bond wire inductor as a negative feedback,and by employing SPDT switch as part of the amplifier's input matching network s,the integrated design can reduce the number of matching elements,while improving the Q value of input matching network,and thus achieve high power gain,low noise figure and good input reflection cofficient.On the other hand,the bypass function of attenuating the input high-power radio frequency signal is realized by the method of joint design of multiple groups of switches,thereby improving the dynamic range of the received signal.The measurement results show that the quiescent current in LNA?EN mode was 32 m A under 5V supply voltage,and in the working frequency range of 2.3-2.7GHz,the noise figure of the receiving front-end chip achieved was 1.55-1.66 d B,and the gain was between 18.2 and19.1d B,the input return loss level of-11?-9d B and the output return loss level of-16?-11 d B were achieved at the same time.At 2.5GHz,the input 1d B compression point was-2d Bm.In Bypass mode,the quiescent current was 0.7m A,the insertion loss in the 2.3-2.7GHz operating frequency band was measured at the level of-7.0 to-6.4d B,and the input and output return losses were-17.9?-15.4d B and-10.6?-9.3 d B,respectively,which successfully met the design requirements. |
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