The Application And Improvement For High Density Plasma CVD Process In Integrated Circuit Manufacturing

The using of the thin film deposition technique plays a great role in theproduction of the integrated circuits. With its good functions, High Density PlasmaChemical Vapor Deposition (HDP CVD) which is one kind of the thin film depositiontechnique has been using more and more widely in the real production nowadays.This paper introduces the HDP CVD process principle, equipment and the way ofmeasurement in details, and gives thorough study for the Void Defect which has beenfound in the production.Because of the development of the integrated circuits, the Critical Dimension ofthe device has been becoming smaller and smaller, which has challenged the gap-fillability of the HDP CVD process. During the production of the integrated circuits, wecould effectively avoid the happening of the Void Defect by adjusting thedeposition-etch ratio. The paper has found out the key process parameter and itsregulation of the changing for the deposition rate and etch rate in the HDP CVDprocess through plenty of testing analysis.Based on his working experience in the film deposition department in the ICfactory, the author summarized a method for resolving the void defect through thetheory analysis and practices, which is helpful to improve the production efficiencyand process stability and enhance the company’s competitive ability in the sameindustry.