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Study On Synapses Of U-shaped Channel XNOR Neurons Co-controlled By Double Bracket Gate And Central Gate

Posted on:2022-05-05Degree:MasterType:Thesis
Country:ChinaCandidate:X T SunFull Text:PDF
GTID:2518306728480154Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
With the development of the information age and the progress of science and technology,semiconductor integrated circuits,as the core devices of electronic products,have promoted the development of different emerging industries to a certain extent,and the application range of reconfigurable field effect transistors proposed in the post-Moorist era has gradually expanded by virtue of their structural advantages.However,some proposed reconfigurable field effect transistors still have problems such as insufficient forward current,insufficient reverse leakage current and insufficient subthreshold swing.This thesis puts forward a kind of can be exclusive or the application logic gate in high integration in the structure of binary synapses double brace bar together with the central gate control u-shaped channel fet,has a double brackets shape control grid and a central control grid,using two kinds of conduction mechanism,respectively is schottky barrier tunneling conduction mechanism and the traditional MOSFET with conduction mechanism,As the main source of current for the forward guide.Different from the traditional Schottky barrier MOSFET,the new transistor has a U-shaped channel and a central control gate to block the reverse leakage current,which acts as the main conduction mechanism of the forward conduction through the tunneling current.The new device can achieve higher forward guide current,smaller reverse leakage current,smaller subthreshold swing,and larger switching ratio.The XNOR gate logic function can be realized by using the structure characteristics of the new transistor itself,which can be used in the study of binary neuron synapses.In this thesis,Silvaco TCAD is used to realize the simulation and analysis of the device.The device structure is edited by Dev Edit3 D,and the device structure is called in Deckbuild to simulate the electrical characteristics by using ATLAS simulation statement.Finally,it is displayed by the view tool Tony Plot2 D.The image is measured,transversal and superimposed in Tonyplot2 D to analyze the simulation results.By changing the key device structure parameters,the final optimization of the parameters is achieved through analysis and comparison,so that the device performance can reach the optimal value.All the simulations in this topic are carried out by quantum model,and the results are more accurate.
Keywords/Search Tags:Schottky barrier transistor, MOSFET, XNOR logic gate, Silvaco TCAD
PDF Full Text Request
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