Research On Key Technologies Of 0.15-1GHz High Energy Efficiency RF Front End

With the rapid development of wireless communication,human beings are gradually entering an era of the Internet of everything,it shows a tendency to develop multi-standard and multi-band radio communication equipment in the future,thus broadband RF receive front-end circuit is the hot spot of research currently,in addition,there is an increasing demand in the performances of power consumption and performance.Low noise amplifier(LNA)and Mixer are important modules in communication equipment,as well as the main energy consumption modules,so it is of great significance to study and design high energy efficiency low noise amplifier and Mixer.This thesis presents a low noise amplifier and a mixer with low power consumption,low noise and high linearity in the frequency range of 0.15?1GHz.The proposed low noise amplifier is based on the structure of the noise cancellation common-gate input low-noise amplifier,it increases the freedom of the input impedance design and reduce the noise of the input branch load resistance by the transconductance enhancement technology;at the same time,the current multiplexing technology is used to reduce power consumption by reducing the circuit static working current;in addition,the linearity optimization module is used to cancel the third-order nonlinear signal generated by the noise elimination branch,and it improves the linearity.The mixer proposed in this thesis is based on the Gilbert double-balanced mixer structure,it achieves broadband matching and reduces the channel current noise of the input transistor through the cross-coupling commongate input,in addition,the cross-coupling common-gate input does not introduce the thirdorder nonlinear signal generated by the effect of the second-order intermodulation,which improves the linearity;at the same time,the current flowing to the switch transisitors is reduced by the auxiliary current source technology,and the channel current noise and 1/f noise of the switch transisitors are reduced;moreover,it increases the input transconductance by the auxiliary current source transisitors,under the condition of achieving the same conversion gain,the power consumption is lower.Based on TSMC 65 nm process,the proposed low noise amplifier has a gain of 19.4?21.6d B,a noise factor of 2.29?2.38 d B,an input third-order intermodulation point(IIP3)of-1?2.1d Bm in the operating band of 0.15?1GHz,and a power consumption of 6.45 m W at 1V operating voltage;the proposed mixer has a conversion gain of 21.4?22.9d B,a noise factor of 4.81?4.96 d B,an input third-order intermodulation point(IIP3)of 5.6?7.3d Bm in the operating band of 0.15?1GHz,and a power consumption of 5.6mW at 1V operating voltage.