Analysis Of Radio-Frequency Device Model And The Design Of Low Noise Amplifier

With the development of microelectronic techniques and the rapiddevelopment of communication technology, radio frequency techniques havebeen widely used in various fields. As the basis of RF techniques,high-performance RF integrated circuits become a hot topic. RF integratedcircuits used mainly traditional GaAs or silicon bipolar process technology, withhigh costs and large power consumption. RF CMOS integrated circuits, low-cost,low power consume, it has become increasingly attracted people's attention.This thesis analyzed the RF silicon-based RF device models firstly, and theselection of an appropriate model for the design of radio frequency integratedcircuits. The aspects of noise matching, linearity, impedance matching, thedesign methodology of the low-noise amplifier is presented in detail, based theprinciple of the low-noise amplifier. This circuit is designed in a TSMC 0.18μm CMOS process and simulated with ADS2005A. Results from simulation showthat the circuit has a noise figure of 1.6-2.1dB, a forward gain of 13-18dB,third-order intercept point IIP3 of greater than-2dBm, impedance matchinggood, return loss is less than classical viewpoint-15dB.As an important component of RF IC, we designed a double-balancedmixer, based in Gilbert mixer, Resistance to improve the use of small inputimpedance. TSMC 0.18μm CMOS process, simulation results show that theimpedance matching well, double sideband noise of 5.698dB, single sideband noise of 9.287dB, got an excellent noise performance, medium-frequencyconversion gain was 9.05dB, output third order intercept point was 23.19dBm,the mixer had good linearity, achieved better results.