Design Of High-performance Double-terminal Output Positive And Negative Voltage Doubler Charge Pump Circuit

Portable consumer electronic devices have become an integral part of people's lives,and the demand for consumer electronic products(such as mobile phones,laptops)is growing rapidly every day.The distinguishing feature of portable products is the high degree of integration of the chip,so each module will need different voltage domains to drive,especially in the level conversion chip,which puts forward higher requirements for negative voltage,so a charge pump is required(Charge Pump)circuit to achieve functions such as positive and inverted boost or partial pressure.However,due to the large voltage difference achieved by the charge pump,it is difficult for ordinary processes to meet the withstand voltage requirements and the designed circuit is difficult to overcome the defects of low efficiency and large output ripple,so how to design a high conversion efficiency output ripple The small charge pump circuit is still the research focus of many scholars.In this thesis,the 0.6?m CMOS process is used to overcome the above-mentioned difficulties,and a high-efficiency and low-ripple double-terminal output charge pump is designed.Its performance has been verified by simulation and is suitable for integrated use in many chips.This article first determines the index requirements that the circuit needs to meet,and then designs each module.Through the analysis of the difficulty of circuit conversion efficiency and output ripple,the circuit structure and size components are adjusted using Cadence software simulation,and finally the entire circuit system is adjusted.Carrying out simulation verification,the main work content is as follows:1.Conduct in-depth research on the current development status of the charge pump field at home and abroad,determine the content framework of this design based on the research content,and study the various circuit structures of each module,elaborate on the theory of the circuit,determine the key parameters,and clarify Indicator requirements.And according to the possible defects in the previous design,research and determine the solution.2.Determine the circuit of the internal sub-module of this design,select the process suitable for this design according to the determined circuit and index requirements,focus on the withstand voltage,isolation,conduction loss of the power device and other issues of the process,and solve the problem.3.After clarifying the circuit structure and technology,perform detailed design and simulation of the circuit,mainly including stability,gain,power supply rejection ratio,clock waveform,output ripple,different voltage domains,voltage stabilization time simulation,etc.,combined with the chip The working environment is simulated for temperature,power supply changes,and process deviations.The simulation results show that the charge pump voltage regulation time of this design is only 51?s,and the purpose of positive and negative voltage doubling can be achieved at the conventional power supply voltage of 2.8-5V.With a typical power supply voltage of 3.3V and a load current of 10 mA,the output positive phase voltage V+ can reach 6.2V,the reverse voltage V-can reach-6V,and the ripple is only 15 mV.It has the advantages of high conversion efficiency and stable output,improving Performance indicators.