Research And Preparation Of Passive Components Based On Polycrystalline Ga₂O₃

?-Ga₂O₃ is an ultra-wide bandgap semiconductor material with high breakdown voltage and good Baliga's figure of merit,with a band gap as high as 4.8eV.It has good application prospects in the field of high-power devices,and has also been applied in the fields of ultraviolet detectors and gas sensors.At present,the research on?-Ga₂O₃materials at home and abroad is mainly concentrated in the fields of material preparation,doping,etching,and?-Ga₂O₃-based photodetectors.With the advancement of devices and process technology,integrated circuits based on?-Ga₂O₃ will become a development trend.Passive components such as resistors and capacitors are essential key components in integrated circuits.Based on the current development status of?-Ga₂O₃materials,this topic carries out research on the preparation of?-Ga₂O₃ by magnetron sputtering,the research on doping and etching of?-Ga₂O₃,and the preparation of?-Ga₂O₃ thin-film resistor elements.The main research contents and results of this paper are as follows:1)Based on radio frequency magnetron sputtering technology,?-Ga₂O₃ thin films were prepared on sapphire substrates.A large number of experimental comparison studies were conducted on magnetron sputtering parameters and ex-situ annealing parameters.Based on the analysis of XRD,AFM,SEM and other test results,the best results were summarized.Excellent?-Ga₂O₃ film preparation process.2)A composite structure of"Ga₂O₃ thin film/metal/Ga₂O₃ thin film/metal/Ga₂O₃thin film"is formed by magnetron sputtering,and a?-Ga₂O₃ thin film embedded with metal atoms is formed after ex-situ high temperature annealing.Absorption spectrum test results show that Al doping is effectively achieved,and Hall test results show that Cu doping is effectively achieved.After laser zone melting,the resistivity and sheet resistance of the copper-doped?-Ga₂O₃ film decrease.3)The?-Ga₂O₃ film is etched with AZ4620 thick glue and inductively coupled plasma.The photolithography process parameters were optimized,the?-Ga₂O₃ film dry etching process was studied through a large number of experiments,the copper electrode was made and the alloy temperature was optimized.Realized 3.233M?and 29.601M?,polycrystalline?-Ga₂O₃ thin film resistance with good ohmic contact.Two flat capacitor structures based on polycrystalline?-Ga₂O₃ film and their manufacturing processes are designed.