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Optical And Electrical Properties, Doping Of Wide Band Gap Semiconductor SiC And ZnO

Posted on:2011-06-04Degree:DoctorType:Dissertation
Country:ChinaCandidate:X Q ChenFull Text:PDF
GTID:1118360305466622Subject:Condensed matter physics
Abstract/Summary:PDF Full Text Request
As a third generation wide band gap semiconductor materials, SiC, and ZnO because of its excellent performance has been one study of hot spots.SiC as a typical wide band gap semiconductor materials with high mobility, excellent thermal stability and chemical stability, high-frequency, high power, high temperature, radiation and other electronic devices has great potential for application. However, SiC single crystal is expensive, domestic Despite the achieved growth of SiC single crystal materials, but still has to import high-quality SiC single crystal, large area substrates is also hard to get. This has prompted people to explore the growth of SiC thin films on Si substrate method. On the one hand, large area Si substrates easy to get, and cost; On the other hand, Si heteroepitaxial SiC substrate could facilitate combination of SiC and Si process to prepare a Si-based devices, to adapt to the needs of large scale integrated circuit.ZnO is a kind ofâ…¡-â…¥direct band gap of wide band gap semiconductor materials, because at room temperature is about 3.37 eV of the band gap and up to 60 meV exciton binding energy, which has been widespread concern and is considered GaN is expected to replace a new generation of short wavelength opto-electronic materials. Preparation of ZnO semiconductor materials with the continuous progress, ZnO-based devices, especially of optoelectronic devices has made great progress. ZnO-based optoelectronic devices, but not yet reached the practical level, its development has encountered a bottleneck, and thus the need for ZnO materials, in-depth study of the basic issues, such as ZnO impurities and defects, ZnO growth equipment, high-quality p-type ZnO prepared and so on. On the other hand to look for other heteroepitaxial p-type material to n-type ZnO thin films with a view to achieve the heterojunction pn junction electroluminescence method also attracted people's attention.Around above background, this thesis five chapters main contents summarized as follows: Chapterâ… briefly introduced SiC and ZnO basic properties including structure, mechanical nature, thermal properties, photoelectric nature introduced their common Preparation and Characterization means and their widely application prospects.Chapterâ…¡specific introduced we experimental group designed, Unicom dual reaction chamber MOCVD equipment.Chapterâ…¢used MOCVD equipment silicon substrates high quality SiC doped Al films studied Al in SiC Films doping mechanism studied SiC doped Al Films conductive type regulation.Chapterâ…£using magnetron sputtering, in 6H-SiC single chip epitaxial doped Sb's ZnO film while growth pure ZnO film as contrast research Sb doped For ZnO Films defects and Optical Properties.Chapterâ…¤summarized and prospected.
Keywords/Search Tags:silicon carbide, zinc oxide, thin film growth, doping, conductive type
PDF Full Text Request
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