Research On Millimeter Wave On-chip Inductor Modeling Technology

In recent years,millimeter-wave wireless communication technology has been widely applied in the field of wireless communication due to its outstanding characteristics such as high data rate,large information capacity,low delay and high reliability.In particular,the fields of 5G communication,Internet of Things,and smart driving,which have been laid out in a large area,show the huge potential of millimeter wave wireless communication.As an important part of the millimeter wave wireless communication,the millimeter wave transceiver front end has set off a wave of research and design in academia and industry.And because the silicon-based CMOS process has the advantages of low cost,low power consumption,and high integration compared with other semiconductor processes,it has obvious advantages in the millimeter wave circuit manufacturing process.In the millimeter wave transceiver front-end,passive components,especially on-chip inductors,play an indispensable role,such as impedance matching,frequency selective filtering,resonant networks,etc.,and on-chip inductors occupy a large area in the circuit layout,so the accuracy of the on-chip inductors simulation is very important.However,the operating frequency of the inductor model in the PDK provided by the process manufacturer is only up to 20 GHz,which is difficult to meet the requirements of high-frequency simulation.In addition,the on-chip accurate inductor model can provide design guidance for circuit designers and help improve circuit design efficiency.Therefore,the on-chip inductance modeling of the millimeter wave plays an important role in the design of millimeter wave integrated circuits.This subject mainly studies the silicon-based millimeter-wave on-chip inductor modeling and on-chip inductor synthesis,which is used in the design of a millimeter-wave low-noise amplifier.Important research contents are as follows:(1)The high-frequency characteristics of the on-chip inductor are studied,the capacitive coupling effect between the transmission line and the inductor coil is investigated,and the applicability of the single ? and double ? inductor models is considered,and an improved single ? is established for different inductors And the dual ? inductor model.By comparing the UMC110 nm process on-chip inductance test data with the simulation data of the inductor model,the accuracy of the inductor model in the range from low frequency to 67 GHz is verified.(2)The synthesis method of on-chip inductance is studied on the basis of the on-chip inductor model.The method starts from the proposed inductor parameter requirements to the on-chip inductance structure parameters.Based on the inductor equivalent scaling model,the required on-chip inductance is obtained by iterative optimization.And using electromagnetic simulation tool to verify the accuracy of the synthesis method.(3)A millimeter-wave low-noise amplifier is designed using CMOS 65 nm process,in which the inductor involved applies the above inductor model and inductor synthesis method.Finally,the simulation results of the complete layout of the low-noise amplifier also verify the accuracy of the inductor model and its integrated method proposed in this topic.