Research On Key Technology And Optimal Design Of 1700V IGBT

Driven by the rapid development of the national economy and the national industrial policy,Chinese IGBT technology and industry have developed rapidly.At present,the mainstream domestic IGBT products are distributed in the voltage range of600-1200 V,but with the continuous development of high-voltage frequency conversion,wind power,photovoltaic,renewable energy,rail transit,power management and other industries,the demand for high-voltage IGBTs is increasingly urgent.Therefore,the existing IGBT technology must be optimized and upgraded to meet these rapidly growing industry markets.Based on this,this article conducts 1700 V IGBT design research under the domestic mature 1200 V process platform,and the reliability test of the final 1700 V finished module passes,which provides a reference for the large-scale production of 1700 V IGBT devices.This article focuses on the design and verification of 1700 V IGBT,and its main contents are:1.Review the development history of IGBT,from the first generation of planar gate PT(Punch through)technology,planar gate NPT(Non Punch Through)technology,trench gate NPT technology,trench gate PT technology,IEGT(Inject Enchancing Gate Transistor)technology,FS(Field stop)technology and the current mainstream Trench-FS-IEGT technology are briefly described.2.A brief description of the principle of IGBT,the main research areas include:threshold voltage,saturation voltage drop,capacitance characteristics,turn-on characteristics,turn-off characteristics,short-circuit parameters.3.On the current domestic mainstream 8-inch IGBT foundry platform,and compatible with the traditional 1200 V process menu,the static parameters of the 1700 V IGBT cell are simulated and studied;The terminal structure of 12 rings has been designed and the terminal structure is changed in order to simulate the different process window of the actual production process to verify that the withstand voltage of the device meets the design requirements;finally,after the TCAD simulation is completed,the 1700V75 A IGBT layout is realized.4.After the wafer-level chip-probe test is performed on the taped-out IGBT,the finished chip is packaged into the power module,and the static,dynamic,short-circuit and other electrical parameters of the finished module are collected,and the reliability test is completed,laying the foundation for subsequent productization.