Design And Investigation On Insulated Gate Bipolar Transistor

On account of the high switching speed, lower power loss as well as easily being controlled and driven, the Insulated Gate Bipolar Transistor(IGBT) has been widely used in the field of power electronics.Though IGBT manufacturing technology has been developed continuously in the last three decades, the huge market demand and the low production level still challenge the prosperity of IGBT field in China, at the same time fostering the growth in this field.In this paper, the development of IGBT is briefly reviewed, based on IGBT's fundamental working principles. And the internal structure is clearly illuminated by dissecting a 1200V IGBT chip.All simulation work is based on Silvaco TCAD, including designing the structure parameters of IGBT cells and termination. The manufacturing process and the layout of 1200V IGBT were also designed.In the last part of this paper, there is a comparison among the Czochralski, Float Zone and Magnetic Czochralski crystals. And it proposed that manufacture IGBT wafer using Magnetic Czochralski method. With the help of Silvaco software, some simulation work on non-uniform distribution of resistivity of IGBT were finished.