Research On Establishing Method Of Diode Electromagnetic Compatibility Model

Nowadays,as an important electronic component,diodes have been widely applied in various electronic systems.With the quickly development of localization of electronic components,there are still some technical bottlenecks in electromagnetic compatibility(EMC)simulation analysis of electronic systems,such as the limitation of software model library,the difficulty of considering the high frequency characteristics of library model,and the lack of model available for domestic diode.In order to ensure the accurate and efficient establishment of the diode EMC model,this paper takes diode as the research object,and combines its theoretical analysis of functional characteristics and electromagnetic interference(EMI)characteristics to propose two effective and feasible modeling methods.The effectiveness and reliability of the modeling methods and the models are verified by comparison of measurements and simulation results.The main research contents are as follows:(1)Research on establishing method of diode EMC model based on physical equations.This method takes the fast recovery rectifier diode 2CZ106 C as the modeling object,and obtains the electrical parameters and curves based on data sheets and experimental tests in the process of model establishment.Further,the model parameters can be fitted and extracted based on the semiconductor physics equations and the nonlinear fitting stochastic optimization algorithms.At the same time,in order to obtain the specific values,other model parameters related to the material and process are reasonably analyzed based on the physical meaning of their own characterization.Then,the EMC model of the diode 2CZ106 can be written according to the SPICE grammar rules.This method is suitable for most types of diodes.The built model can accurately simulate the functional characteristics in practical applications,the EMI characteristics such as junction capacitance and reverse recovery.The built model can be used for EMC performance simulation analysis,but it is difficult to accurately simulate the working performance of TVS diodes,zener diodes and other special application diodes.(2)Research on the establishing method of diode EMC model based on an equivalent circuit.This method takes the zener diode 1N5355 B as an example to design an equivalent circuit,which divides the I-V characteristics into four regions: forward bias,leakage current before breakdown,reverse bias after breakdown,and maximum current limit.And this paper calculates and determines the model parameters of the four regions based on experimental tests and data sheets.Then the EMC model of zener diode 1N5355 B has been established according to the equivalent circuit nodes.This method uses a set of ideal components to construct an equivalent circuit.The built model can not only accurately simulate the functional characteristics and EMI characteristics,but also take into account the complex characteristics such as breakdown characteristics,temperature characteristics,forward and reverse series resistance differences,and maximum reverse current limitation.The built model can simulate the working performance of special application diodes such as TVS diodes and zener diodes.(3)The EMC model of diodes is verified and the error is analyzed.Firstly,PCB circuit board is designed and model verification platform is built,and different frequency signals are given as excitations for measurements.Then,the design files of PCB and the diode EMC model are imported into CST to build the simulational models corresponding to the platform of model validation.Finally,The comparisons of measurements and simulational results and their error analysis are carried out in the time domain and frequency domain seperately,which proves that the two modeling methods and the built models are effective and accurate.