The Reliability Study On Modeling And Simulation Of RF Microsystem Interconnection

The application of RF(Radio Frequency)microsystems has important application value in radar,communication,electronic countermeasures and other fields.With the development of RF microsystems towards miniaturization and high integration,with higher interconnection density structures of BGA(ball grid array),TSV(through silicon via)and RDL(redistribution layers)interconnection technology has been the major interconnection process of RF microsystems.The RF microsystem are usually working on a very hash and tough environment,so it is hard to repair or replace.The high integration density brings greater thermal dissipation,so the reliability of RF microsystem interconnection structures is becoming a key technology.It has a very importance value for engineered RF microsystems.However,the reliability of RF microsystem still in an exploring time.In this paper the reliability of BGA,TSV and RDL which used in microsystem of radio frequency as interconnection structures be reliability modeling and studied.The main work of this paper is following bellowed:(1)Research on the reliability of interconnection structure composed of BGA and RDL.This article discusses the reliability of five dimensions including substrate material,solder ball material,solder ball number,solder ball pitch,and solder ball diameter for the interconnect structure composed of BGA and RDL.Applying the Darveaux model and the Steinberg's three area method as the reliability life prediction model for BGA under random vibration and thermal shock.The results show that SAC305 has a better prediction life under random vibration and thermal shock.However,the solder balls' s pitch,material,and diameter have a difference impact under random vibration and thermal shock.Therefore,by optimized the structure of interconnection could improve reliability,that plays an important reference for reliability design.(2)Research on the reliability of interconnection structure composed of TSV and RDL.Focused on researching the impact of TSV silicon transfer board number and signal hole position.For TSV filled copper,the Multilinear Isotropic Hardening constitutive model is used for mechanical characterization.The Coffin-Mason life model is used to predict the life of TSV under temperature shock load.The three-zone method based on Steinberg and the life prediction model based on elastic strain are also used to predict the random vibration life of TSV.The results show that using double silicon transfer board could improve the reliability life.(3)Based on the reliability analysis method mentioned above.A Reliability optimization was designed for X-band four channels(2×2 array)module with BGA and RDL.The four channels amplitude phase multi-function chip and power divider of the module are packaged through BGA solder balls and RDL.The size is 15mm×14.6mm.According to the simulation results show that the output power is great than 35 d Bm,the gain of the transmission channel is great than 26 d B,the receiving noise figure is under3 d B,and the receiving channel gain is great than 15 d B for every channel.A reliability design optimization method by adding BGA grounding solder balls are proposed.The results show that the life of the module under temperature shock load and random vibration load can be improved by 25% and 31% respectively.