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Design And Analysis Of Terahertz Detector And Terahertz Radiation Source Based On CMOS Process

Posted on:2020-04-04Degree:MasterType:Thesis
Country:ChinaCandidate:P L SunFull Text:PDF
GTID:2518306518969229Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
Terahertz wave has strong penetrability,high security and large information carrying capacity,so it is widely used in safety inspection,biomedical,environmental detection,information communication.Terahertz technology has superior performance,and it has become a hot spot in scientific research in recent years.As one of the most important blocks of terahertz technology,terahertz detectors and terahertz radiation sources have been widely concerned by the scientific community.However,many terahertz detectors and terahertz radiation sources are based on the optical technology.These terahertz detectors and terahertz radiation sources are large in size,costly and low in integration.It greatly limits the development of terahertz imaging technology.In contrast,terahertz detectors and terahertz radiation sources fabricated in CMOS process are small,low cost,highly integrated and these systems can be heavily produced.Therefore,this thesis designs terahertz detectors and terahertz radiation sources by using CMOS process.The main works and results are as follows:1.A 2.58 THz terahertz detector has been designed based on 55 nm CMOS process.The detector transistor uses an asymmetric structure to improve the overall performance of the detector.The measured results show that the responsivity is 42.98 V/W and the noise equivalent power is 1.15 n W/Hz1/2.2.In terms of the problem that the gain and radiation efficiency of on-chip antenna is limited,a quartz-loaded SIW slot antenna and a dielectric resonant SIW slot antenna are designed to improve the gain and radiation efficiency of the on-chip antenna by combining quartz-loaded and dielectric resonators with substrate integrated waveguide(SIW)technology.The quartz-loaded SIW slot antenna achieves a relative bandwidth of 10.7%,an antenna gain of 4.9 dBi and an antenna radiation efficiency of76%.The dielectric resonant SIW slot antenna achieves a relative bandwidth of 9.5%,an antenna gain of 10.5 dBi and an antenna radiation efficiency of 80.5%.3.A 427 GHz terahertz triple-push oscillator is designed to improve the operating frequency of the oscillator by using the third harmonic.The simulated results show that the oscillator has an output power of-6 dBm at 427 GHz and a phase noise of-89.69dBc/Hz at 1 MHz offset.The oscillator is respectively connected to a quartz-loaded SIW slot antenna and a dielectric resonant SIW slot antenna.When the oscillator is connected to a quartz-loaded SIW slot antenna,the EIRP is-1 dBm.When the oscillator is connected to a dielectric resonant SIW slot antenna,the EIRP is 4.5 dBm.
Keywords/Search Tags:Terahertz, CMOS, Detector, On-chip antenna, Oscillator
PDF Full Text Request
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