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The Transmission Characteristic Simulation Of GaAs Photoconductive Semiconductor Switches In Pspice

Posted on:2008-01-27Degree:MasterType:Thesis
Country:ChinaCandidate:Y SunFull Text:PDF
GTID:2178360212979474Subject:Physical Electronics
Abstract/Summary:PDF Full Text Request
Photoconductive Semiconductor Switches (PCSS's) is a new semiconductor device that combine photoelectric semiconductor with ultra-short laser pulse. It has excellent properties, such as fast respondence, picosecond or sub-nanosecond rising time, low inductance and capacitance, jitter free triggering, high repetition rate and so on. Therefore, it has wide application prospects in high power and ultra-band generation and ultra-fast electronics, etc. However, the influence by dispersion and power decrease could not be ignored in transmitting the electromagnetic pulse of GHz bandwidth. Also, at present, people always treat storage oscilloscope as pure resistance when they study the output characteristic of PCSS's in experiments and theories, which makes the results not be accurate. As a result, it is necessary to study the transmission properties of PCSS's and realize how do the loads influence the output properties, for the purpose of most superior matching PCSS's with the external circuit. Besides, when the complicated PCSS's system is designed, it is necessary to simulate PCSS's for improving its reliability, cutting the costs and shorten the cycle.In the paper, it was analyzed the working principle of PCSS's and built its models in the circuit. Then Matlab software was used to simulate the relationship between the resistance and time, the resistance and the gap, the incident light energy and carrier density. The method of Laplace transforms was applied to analyze the general pulse generator. Then, Pspice software was used to simulate the circuit of the general switch or PCSS's and the output properties in different loads were attached. The results were coincidence with the output pulses of the experiments. In addition, according to the experiments in linear mode of PCSS's, it was mainly analyzed the relationship between bias voltage and transmission efficiency, the incident light energy and transmission efficiency, the gap and transmission efficiency separately.
Keywords/Search Tags:Semi-insulating (SI) GaAs PCSS's, Transmission Line, Pspice, Load
PDF Full Text Request
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