| SI-GaAs nonlinear mode(lock-on mode)can be triggered by laser or electron beam injection.In GaAs photoconductive switches,the nonlinear mode can bring great current gain,greatly reduce the requirement of laser monopulse energy,thus reducing the volume and cost of the system and adapting to the application requirements.It has been confirmed that the use of local avalanche carriers in MIM structure samples can trigger GaAs nonlinear conduction.The electrical triggering nonlinear mode can output nanosecond high voltage pulse after triggering,which has important research value and application potential in the field of pulse power technology.Based on the study of the pulse generation mechanism of electrically triggered SI-GaAs nonlinear mode,the following work has been done in the improvement of process structure and synchronous triggering:1.Through the test of sample life,the failure reason of MIM(Metal-Semiconductor-Metal)structure sample was analyzed.On this basis,the reverse-biased pn junction was used to replace the Schottky junction,and the new structure MIP(Metal-Semiconductor-P-GaAs)structure diode,and research the output characteristics of the diode.2.The parallel synchronous triggering and series synchronous triggering of MIP diodes are realized by using the nonlinear mode +du/dt delay breakdown and-du/dt triggering.The experimental results show that the synchronization error of the two devices in parallel triggering is less than 1ns,but the parallel connection does not increase the output current.The synchronous triggering of two devices in series has achieved good results.The amplitude of the series output electrical pulse is close to 89%of the sum of the amplitudes of the output electrical pulses of a single device.3.The on-state resistance of MIP diode under different conditions was studied.The experimental results show that the sample on-state resistance is related to the output current.The theory analyzes the on-resistance conduction characteristic mechanism.The +du/dt delayed breakdown characteristics and-du/dt trigger characteristics of the electrically triggered non-linear mode give the diode unique advantages and development potential in the field of pulse compression.In this paper,the research and development of new pulse compression devices can be promoted by the simultaneous triggering of multiple devices and the improvement of technology to reduce on resistance. |
