| With the advent of the information age,people put forward more and more requirements for the next generation of calculate equipment,especially in the field of equipment performance and manufacturing,such as the improvement of density,the improvement of data processing speed,the reduction of power consumption,flexibility,versatility,scalability,cost-effectiveness,etc.Because the traditional silicon-based devices can not meet these requirements,researchers have been trying to find the active materials of the next generation calculate equipment,which mainly focus on metal oxide semiconductors,organic semiconductors,two-dimensional materials,and so on.Although devices based on these technologies have shown significant characteristics,there is always a trade-off between advantages and disadvantages.Due to its excellent optical and charge transfer properties,organic-inorganic halide perovskites have been the subject of intensive research as active materials for solar cells in the past decade.Recently,rapid progress has been made in the application of organic-inorganic halide perovskites to other electronic devices,such as memristors,field effect transistors and artificial synaptic devices.Due to its unique properties and main advantages in manufacturing,organic-inorganic halide perovskite is considered as a promising material for the next generation of computing devices.It is important to study the resistance switching mechanism of organic-inorganic halide perovskite based memristors for further application in the next generation of computing systems.In order to study the resistance switching mechanism of organic-inorganic halide perovskite memristor and its potential application in neuromorphology calculation,the following two studies are carried out in this paper.The main contents of this project are as follows:1.We have prepared 2D-3D mixed perovskite and used traditional metal insulator metal structure,for the first time,ITO/2D-3D mixed perovskite/Au photovoltaic devices with stack structure have been used in memristor research.The results show that the new device has resistance switching characteristics,and shows novel switching characteristics,high repeatability of current-voltage curve,hysteresis current characteristics,and scan rate dependence.In this paper,the intrinsic physical mechanism of the device and the defect dynamics are deeply studied,the p-i-n junction model is constructed,the cause of hysteresis current is revealed,and the mechanism of air mediated electron tunneling is clarified.It is considered that the transition from direct tunneling to Fowler-Nordheim tunneling is the mechanism of resistance switching,and the defect migrating to the interface is the source of hysteresis current,which interferes with the tunneling current is the source of scan rate dependence.2.Based on the study of the intrinsic mechanism of 2D-3D perovskite memristor,in order to further improve the stability of the device and adjust the interface barrier,a layer of PEDOT:PSS was coated on the ITO electrode,the ITO/PEDOT:PSS/2D-3D hybrid perovskite/Au device is fabricated,which achieves higher stability and relatively symmetrical current voltage characteristic curve,thus leading to lower working voltage.Various functions known in biological synapses have been confirmed in organic-inorganic halide perovskite synaptic devices,including four forms of spike time-dependent plasticity(STDP),spike rate dependent plasticity(SRDP),short-term plasticity(STP)and long-term potentiation(LTP),as well as learning experience behavior.Perovskite synapses have the potential of low energy consumption.The energy consumption of each event is a J/100 nm~2,which is far less than that of biological synapses.The display of high performance organic-inorganic halide perovskite synaptic devices opens up a new way for the application of organic-inorganic halide perovskite materials in neuromorphological devices,which provides high connectivity and high density for biomimetic computing. |
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