Research On Coupling Mechanism Of Bound States And Photon Detecting Devices In Infrared Continuum

Major national strategies such as LIDAR,deep-space communications,astronomical observation,and quantum information technology have increasingly higher requirements for the sensitivity of infrared photon detectors.The signal-to-noise ratio of traditional mid-wave infrared semiconductor detectors cannot meet the demand.At 4.3?m,the atmospheric window of the mid-wave infrared,also the characteristic absorption peak of carbon dioxide,which can be applied to detect carbon dioxide and support the carbon neutralization efforts.This paper will focus on reducing the noise,improving the signal-to-noise ratio,and looking for an ideal photoelectric coupling to improve the detection performance of a few-photon detector with a given number of pulsed photons.The main contents are as follows:1.We conduct a systematic study on the influence of the physical structure parameters of semiconductor devices on dark current.The dark current characteristics of 3-5 micron mid-wave infrared avalanche PIN mesa HgCdTe avalanche diode with a bias voltage in the range of-7 V to 0 V are studied through a numerical model,and the carrier characteristics under the reverse bias voltage are also analyzed.The PIN structure is optimized for the doping concentration,thickness,and other parameters of the central intrinsic layer to reduce the dark current of the APD.2.When it talks about the avalanche photoelectricity of the PIN structure made of mercury cadmium telluride material working in the mid-infrared band of 3-5 microns,it comes to reduce the dark current of the photosensitive unit of the avalanche photodetector from the physical structure parameters of the semiconductor device.The mechanism of dark current under reverse bias of the PIN structure for the doping concentration,thickness etc of the central intrinsic layer to reduce the dark current of the APD is studied.3.We numerical calculate the refractive index of the two-dimensional material and design the structure of the resonant cavity through a unique reverse design process.We construct a BIC structure with a leakage channel matching the refractive index of black phosphorous and numerically verified that the device has the performance of improving the absorption rate of black phosphorous.The strong vibration conversion absorption band with carbon dioxide at 4.3 microns can be applied to develop high-sensitivity mid-wave infrared devices for detecting the reflection spectrum of the atmosphere.