Font Size: a A A

Research On Thermoelectric-Photoelectric Integrated Micro-Nano Energy Harvester Systerm For Single-Electron Transistor

Posted on:2021-09-05Degree:MasterType:Thesis
Country:ChinaCandidate:S C JiFull Text:PDF
GTID:2518306476952239Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
Today,with the rapid development of the Internet of Things,T/R components,as an important part of the Internet of Things communication network,have become the focus of research.In T/R components,a good signal detection device is essential.In order to optimize the performance of signal detection devices,on the one hand,we hope to expand the range of detectable signals,improve the accuracy of signal detection,and enhance the ability to detect weak signals.Therefore,the research of signal detection devices with high precision and high sensitivity has become a hot spot.On the other hand,there are problems such as excessive power consumption and serious heat loss in the T/R components.How to reuse this part of energy to realize the self-power supply of the device has become another hotspot.Based on SET technology and energy harvesting technology,This thesis focuses on the research of thermoelectric-photoelectric energy harvester system for single-electron transistor(SET).The main contents are:(1)Improving the accuracy of signal detection devices and the ability to detect weak signals:The structure and operating principles of a SET amplifier are discussed.Based on the single-electron orthodox theory,the source-drain current characteristics are analyzed by the mathematical modeling in Matlab.The expressions of gm and gds at low temperature are also derived.According to the mathematical model,an equivalent circuit model and parameter model are established,and Spice simulation of the equivalent model is realized.The results show that the output current error of the two models is 0.17%.Finally,in order to realize the amplification of 0.1?V AC signal,the equivalent capacitance and equivalent source-drain-resistance of the SET Coulomb core area are given.(2)Solving the problem of heat dissipation of the device and enhancing the self-power supply capability of the device:A thermoelectric-photoelectric integrated micro-nano energy harvester is fabricated.The thermoelectric and photoelectric harvester are integrated on a single wafer.The proposed device uses PI to optimize the heat flow path,which effectively reduces the thermal resistance and improves conversion efficiency.The maximum output voltage factor of the thermoelectric energy collector can reach to 0.5763 Vcm-2K-1,and the maximum output power factor can reach to 2.757×10-2?Wcm-2K-2.When the upper surface receives light,the efficiency is 5.5%,and the fill factor is 66.98,while the efficiency is 0.275%and the filling factor is 30.35.(3)Applications of thermoelectric-photoelectric integrated energy harvester circuits for SET:The hybrid system is consist of a SET amplifier,a voltage regulator circuit and a thermoelectric-photoelectric integrated energy harvesting system.The system collects the heat loss of the limiter,power amplifier,temperature control module and solar energy as the energy source.The output of the integrated energy harvesting system provides a stable DC bias for the SET amplifier through the voltage stabilizing circuit.In the end,this thesis gives the layout design and related process of SET amplifier and thermoelectric-photoelectric integrated micro-nano energy harvester.
Keywords/Search Tags:micro-nano energy harvester, thermoelectric-photoelectric monolithic integration, single electron transistor, SET amplifier, weak signal detection
PDF Full Text Request
Related items