Inverse Design Of New Micro-Nano Optoelectronic Device

With the advent of the Internet and artificial intelligence era,people's requirements for chip processing speed,power consumption and size are also increasing.In the future,optoelectronic devices should have the characteristics of customizable functions,highly integrated structures,and comprehensive performance,which poses a huge challenge to the design methods of the devices.With the advantages of high-precision manufacturing technology and computing power,the inverse design method of optoelectronic devices is proposed.How to utilize the advantages of supercomputing platforms to realize the intelligent design of Micro-nano optoelectronic devices effectively has become a research hotspot in recent years.Based on this,this paper focuses on the intelligent design of novel micro-nano optoelectronic devices.The main contents of the paper are as follows:1.Based on the existing inverse design platform,a multi-layer heterostructure inverse design simulation platform is built,and a high-performance vertical coupler based on inverse design is proposed in this paper.The coupling efficiency improved greatly by integrating Al mirror.The FDTD simulation results show that the coupling efficiency is 88.42%at 1550nm(32.45%without Al mirror),and the device has a wide 3dB bandwidth of 1500-1603nm with good bandwidth characteristics and low loss characteristics,and the device has strong polarization sensitivity.At the same time,this paper analysis the loss and tolerance of the vertical coupler to further verify the effectiveness and reliability of the vertical coupler designed by inverse design.2.The inverse design of a large-area vertical coupler was successfully realized through Lumerical source import technology and expanded minimum grid accuracy.A set of optimal initial structural parameters was detennined by exploring the impact of initial structural parameters on performance and simulation time-consuming.The maximum coupling efficiency obtained is 79.7%.Through time-consuming analysis,it is concluded that the integrated metal layer is the main reason for the time-consuming growth.In addition,the function of the vertical coupler is further expanded,and a vertical coupler with wavelength division multiplexing function(-2.43dB@1310nm,-2.37dB@1550nm)is designed,and a vertical coupler with polarization splitting function is designed.The coupling efficiency for X-pol is-1.13dB,the coupling efficiency for Y-pol is-1.28dB,and the extinction ratio of the two ports are both greater than 25dB.3.Using HFSS-Matlab co-simulation technology and intelligent optimization algorithms,an intelligent optimization platform for microwave devices is built.At the same time,the function of the microwave inverse design platforam is further expanded,and a variety of simulation primitive models(Microstrip?SI W)and different topological structures(random distribution,top and bottom symmetry,quarter-to-one symmetry)are provided,which can improve the algorithm convergence speed and reduce the design duration.And a Ku-band microstrip filter based on inverse design is proposed in this paper.The simulation results show that the microwave transmittance of the single-layer device at 16GHz is-8.2dB.Through the introduction of the double-layer structure,the transmittance is increased to-4.8dB.In order to further verify the good functional scalability of microwave devices designed by inverse design.We designed a multi-band microwave filter device,and the simulation results show that the transmission coefficient of the multi-layer device at 15.6GHz is-4.9dB,and the transmission coefficient of the device is-5.6dB at the center frequency of 17.6GHz.