Investigation On Mn-doped ZnO Thin Films And Resistive Switching Devices

In this work, the effect of Mn doping and annealing on ZnO thin films and the resistiveswitching behavior of Mn-doped ZnO-based devices was studied.Firstly, thin films with the Mn doping content0%,1%,3%,5%,7%and10%were preparedonto glass substrates by sol-gel technique.The influence of Mn doping on structural and opticalproperties of the thin films was studied. When the Mn doping concentration was1%, thefilmshave the best crystal qualityand the strongest UV emission peak intensity of PL spectra.Mndoping caused a red shift at low dopping level and then a blue shift of the UV peak with theincrease of Mn doping.Secondly, the effect of annealing on crystal structure and resistivity was investigated. It wasfound that annealing temperature and time all could influence crystal quality and electricalconductivity of the Zn0.99Mn0.01O films.When the annealing temperature rise to500°C and theannealing time was up to3h, the crystal quality of the Zn0.99Mn0.01O film was the best and theresistivity of the film reach its minimum value.Lastly, Al/ZnO/ITO and Al/Zn0.99Mn0.01O/ITO structure resistive switching devices werefabricated. All of these devices showed bipolar resistive switching behavior.The conduction mechanisms of Al/ZnO/ITO devices can be explained by the space chargelimited conduction model. For Al/Zn0.99Mn0.01O/ITO devices, the annealing process has impacton VSETand VRESET.VSEThas the minimum value of2.2V when annealing temperature was500°C.With the increase of annealing time VSETand VRESETdecreased obviously. In addition, theincrease of annealing temperature and time all could broaden the memory window. The ratio ofHRS to LRS could reachs7.2510when the annealing temperature rise to500°C and theannealing time is up to3h.